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IRF7493TRPBF

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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
viewers irf7493trpbf: viewers · Ray 23d ago
irf7493trpbf-etched.glb irf7493trpbf: factory component page (tier=lcsc) · Ray 23d ago
irf7493trpbf-etched.step irf7493trpbf: factory component page (tier=lcsc) · Ray 23d ago
irf7493trpbf-hero.glb irf7493trpbf: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
irf7493trpbf-hero.overlay.json Publish 0.1.0 · Ray 23d ago
irf7493trpbf.glb Publish 0.1.0 · Ray 23d ago
irf7493trpbf.kicad_mod Publish 0.1.0 · Ray 23d ago
irf7493trpbf.kicad_sym Publish 0.1.0 · Ray 23d ago
irf7493trpbf.lbr Publish 0.1.0 · Ray 23d ago
irf7493trpbf.step Publish 0.1.0 · Ray 23d ago
package.json Publish 0.1.0 · Ray 23d ago
page.json irf7493trpbf: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 17d ago
README.md irf7493trpbf: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 17d ago

IRF7493TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7493TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel HEXFET, pin 1 on the SO-8 top view; drain-to-source voltage is rated 80V.
2 S passive Source of the N-channel HEXFET, pin 2 on the SO-8 top view; continuous drain current is 9.3A at TC = 25°C.
3 S passive Source of the N-channel HEXFET, pin 3 on the SO-8 top view; pulsed drain current is 74A.
4 G input Gate of the N-channel HEXFET, pin 4 on the SO-8 top view; gate-to-source voltage is rated ±20V.
5 D passive Drain of the N-channel HEXFET, pin 5 on the SO-8 top view; RDS(on) is 15mΩ max at VGS = 10V.
6 D passive Drain of the N-channel HEXFET, pin 6 on the SO-8 top view; drain-to-source breakdown voltage is 80V min.
7 D passive Drain of the N-channel HEXFET, pin 7 on the SO-8 top view; continuous drain current is 7.4A at TC = 70°C.
8 D passive Drain of the N-channel HEXFET, pin 8 on the SO-8 top view; drain-to-source voltage is rated 80V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 80 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9.3 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current ID 7.4 A TC = 70°C, VGS @ 10V 1
Pulsed Drain Current IDM 74 A 1
Maximum Power Dissipation PD 2.5 W TC = 25°C 1
Maximum Power Dissipation PD 1.6 W TC = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction Temperature TJ -55 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Junction-to-Lead Thermal Resistance RθJC 20 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 50 °C/W 1
Drain-to-Source Breakdown Voltage BVDSS 80 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 11.5 15 mΩ VGS = 10V, ID = 5.6A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 80V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 64V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Forward Transconductance gfs 13 S VDS = 15V, ID = 5.6A 2
Total Gate Charge Qg 35 53 nC 2
Continuous Source Current (Body Diode) IS 9.3 A 2
Pulsed Source Current (Body Diode) ISM 74 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V 2
Reverse Recovery Time trr 37 56 ns TJ = 25°C, IF = 5.6A, VDD = 15V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 52 78 nC TJ = 25°C, IF = 5.6A, VDD = 15V, di/dt = 100A/µs 2
Single Pulse Avalanche Energy EAS 180 mJ Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 5.6A 2
Avalanche Current IAR 5.6 A 2

CAD (KiCad official)

  • Symbol: IRF7493TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7493trpbf-etched.step / irf7493trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7493trpbf.step / irf7493trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 bd22a5d30f2bc60f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF