# IRF7476PBF-HXY

**HXY MOSFET** · MOSFETs · SOP-8

IRF7476PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 2 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 3 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±12 V maximum, drives down to 4.5 V for RDS(ON) < 5.5 mΩ. |
| 5 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 7 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TC=25℃ | 1 |
| Drain Current Continuous | ID |  |  | 20 | A | TC=25℃ | 1 |
| Drain Current Continuous | ID |  |  | 16 | A | TC=70℃ | 1 |
| Drain Current Pulsed | IDM |  |  | 140 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 162 | mJ |  | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 57 | A |  | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction to Ambient | RθJA |  |  | 40 | ℃/W |  | 1 |
| Thermal Resistance Junction to Ambient (Fig 12 note) | RθJA |  | 75 |  | °C/W | Figure 12 | 5 |
| Drain-Source Breakdown Voltage | VDSS | 20 |  |  | V | ID=250 uA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 1.6 | V | VDS=VGS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  |  | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  |  | 7 | mΩ | VGS=4.5V, ID=20A TJ=125℃ | 2 |
| On State Drain Current | ID(ON) | 140 |  |  | A | VGS=10V, VDS=5V | 2 |
| Forward Transconductance | gFS |  | 105 |  | S | VDS=5V, ID=20A | 2 |
| Input Capacitance | Ciss |  | 3080 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 520 | 960 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 350 | 810 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate Resistance | Rg |  | 0.6 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 28 | 43 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Source Charge | Qgs |  | 7 | 11 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Drain Charge | Qgd |  | 7 | 17 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Turn-On Delay Time | td(on) |  | 7 |  | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 8 |  | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 70 |  | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 18 |  | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 13 | 20 | ns | IF=20A, dI/dt=500A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 29 | 43 | nC | IF=20A, dI/dt=500A/us | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 4 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | IS=1A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `IRF7476PBF-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7476pbf-hxy-etched.step` / `irf7476pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7476pbf-hxy.step` / `irf7476pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/irf7476pbf-hxy-datasheet.pdf) (7 pp, sha256 `8728e498c595a95c`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7476pbf-hxy-datasheet.pdf)