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IRF7476PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7476PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7476PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 2 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 3 | S | passive | Source of the N-channel MOSFET (one of three tied source pins). |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±12 V maximum, drives down to 4.5 V for RDS(ON) < 5.5 mΩ. |
| 5 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 6 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 7 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
| 8 | D | passive | Drain of the N-channel MOSFET (one of four tied drain pins); VDS 20 V maximum, ID 20 A continuous at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC=25℃ | 1 | |
| Drain Current Continuous | ID | 20 | A | TC=25℃ | 1 | ||
| Drain Current Continuous | ID | 16 | A | TC=70℃ | 1 | ||
| Drain Current Pulsed | IDM | 140 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 162 | mJ | 1 | |||
| Single Pulse Avalanche Current | IAS | 57 | A | 1 | |||
| Power Dissipation | PD | 3.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 40 | ℃/W | 1 | |||
| Thermal Resistance Junction to Ambient (Fig 12 note) | RθJA | 75 | °C/W | Figure 12 | 5 | ||
| Drain-Source Breakdown Voltage | VDSS | 20 | V | ID=250 uA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.6 | V | VDS=VGS, ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 7 | mΩ | VGS=4.5V, ID=20A TJ=125℃ | 2 | ||
| On State Drain Current | ID(ON) | 140 | A | VGS=10V, VDS=5V | 2 | ||
| Forward Transconductance | gFS | 105 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 3080 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Output Capacitance | Coss | 520 | 960 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 350 | 810 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Gate Resistance | Rg | 0.6 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge | Qg | 28 | 43 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Gate Source Charge | Qgs | 7 | 11 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Gate Drain Charge | Qgd | 7 | 17 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Turn-On Delay Time | td(on) | 7 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 8 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 70 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 18 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 13 | 20 | ns | IF=20A, dI/dt=500A/us | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 29 | 43 | nC | IF=20A, dI/dt=500A/us | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | IS=1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
IRF7476PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7476pbf-hxy-etched.step/irf7476pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7476pbf-hxy.step/irf7476pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
8728e498c595a95c, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).