# IRF7416TR

**UMW** · MOSFETs · SOP-8

IRF7416TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 2 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 3 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with a gate-to-source voltage rating of ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.04 | V | VDS=VGS, ID=-250μA | 2 |
| Forward Transconductance | gFS | 5.6 |  |  | S | VDS=-10V, ID=-2.8A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 20 | mΩ | VGS=-10V, ID=-5.6A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 35 | mΩ | VGS=-4.5V, ID=-2.8A | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -1 | µA | VDS=-24V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | -25 | µA | VDS=-24V,VGS=0V,TJ=125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | -100 | nA | VGS=-20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | 100 | nA | VGS=20V | 2 |
| Total Gate Charge | Qg |  | 61 | 92 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 |
| Gate-to-Source Charge | Qgs |  | 8 | 12 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 22 | 32 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | -3.1 | A |  | 3 |
| Pulsed Source Current (Body Diode) | ISM |  |  | -45 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1 | V | TJ=25°C,IS=-5.6A,VGS=0V | 3 |
| Reverse Recovery Time | trr |  | 56 | 85 | ns | TJ=25°C, IF=-5.6A, dI/dt=100A/μs | 3 |
| Reverse Recovery Charge | Qrr |  | 99 | 150 | nC | TJ=25°C, IF=-5.6A, dI/dt=100A/μs | 3 |
| Maximum Junction-to-Ambient | RθJA |  |  | 50 | °C/W |  | 1 |
| Continuous Drain Current | ID |  |  | -10 | A | VGS=-10V, TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -7.1 | A | VGS=-10V, TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -45 | A |  | 1 |
| Power Dissipation | PD |  |  | 2.5 | W | TA=25°C | 1 |
| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 370 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | -5 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ |  | -0.024 |  | V/°C | ID=-1mA,Reference to 25°C | 2 |
| Turn-On Delay Time | tD(on) |  | 18 |  | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 |
| Rise Time | tr |  | 49 |  | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 59 |  | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 |
| Fall Time | tf |  | 60 |  | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 |
| Input Capacitance | Ciss |  | 1700 |  | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 |
| Output Capacitance | Coss |  | 890 |  | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 410 |  | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 |

## CAD (KiCad official)

- Symbol: `IRF7416TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7416tr-etched.step` / `irf7416tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7416tr.step` / `irf7416tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irf7416tr-datasheet.pdf) (10 pp, sha256 `a1d7094da639a4c5`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7416tr-datasheet.pdf)