component
IRF7416TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7416TR
UMW · MOSFETs · SOP-8
IRF7416TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 2 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 3 | S | passive | Source terminal of the P-channel MOSFET (pins 1, 2, 3 are tied together as SOURCE). |
| 4 | G | input | Gate terminal of the P-channel MOSFET, with a gate-to-source voltage rating of ±20 V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (pins 5, 6, 7, 8 are tied together as DRAIN), with continuous drain current of -10 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.04 | V | VDS=VGS, ID=-250μA | 2 | |
| Forward Transconductance | gFS | 5.6 | S | VDS=-10V, ID=-2.8A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 20 | mΩ | VGS=-10V, ID=-5.6A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 35 | mΩ | VGS=-4.5V, ID=-2.8A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS=-24V,VGS=0V,TJ=125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS=-20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS=20V | 2 | ||
| Total Gate Charge | Qg | 61 | 92 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 | |
| Gate-to-Source Charge | Qgs | 8 | 12 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 22 | 32 | nC | ID=-5.6A, VDS=-24V, VGS=-10V | 2 | |
| Continuous Source Current (Body Diode) | IS | -3.1 | A | 3 | |||
| Pulsed Source Current (Body Diode) | ISM | -45 | A | 3 | |||
| Diode Forward Voltage | VSD | -1 | V | TJ=25°C,IS=-5.6A,VGS=0V | 3 | ||
| Reverse Recovery Time | trr | 56 | 85 | ns | TJ=25°C, IF=-5.6A, dI/dt=100A/μs | 3 | |
| Reverse Recovery Charge | Qrr | 99 | 150 | nC | TJ=25°C, IF=-5.6A, dI/dt=100A/μs | 3 | |
| Maximum Junction-to-Ambient | RθJA | 50 | °C/W | 1 | |||
| Continuous Drain Current | ID | -10 | A | VGS=-10V, TA=25°C | 1 | ||
| Continuous Drain Current | ID | -7.1 | A | VGS=-10V, TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -45 | A | 1 | |||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 370 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | -0.024 | V/°C | ID=-1mA,Reference to 25°C | 2 | ||
| Turn-On Delay Time | tD(on) | 18 | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 | ||
| Rise Time | tr | 49 | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 59 | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 | ||
| Fall Time | tf | 60 | ns | VDD=-15V, ID=-5.6A, RG=6.2Ω, RD=2.7Ω | 2 | ||
| Input Capacitance | Ciss | 1700 | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 | ||
| Output Capacitance | Coss | 890 | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 410 | pF | VGS=0V, VDS=-25V, ƒ=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
IRF7416TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7416tr-etched.step/irf7416tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7416tr.step/irf7416tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
a1d7094da639a4c5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).