component

IRF740

Public Made by Adom

by adom

Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF740

Minos · MOSFETs · TO-220

IRF740 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with gate-to-source voltage limited to +/-30 V and threshold of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain (also connected to the mounting tab); drain-to-source breakdown voltage 400 V with continuous drain current of 10 A at Tc=25℃.
3 S passive Source; body diode conducts from source to drain with continuous current of 10 A and pulsed current of 40 A.

Key specifications

Parameter Value
Manufacturer Minos
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 400 V 1
Drain Current (continuous) ID 10 A Tc=25℃ 1
Drain Current (pulsed) IDM 40 A 1
Gate to Source Voltage VGS -30 30 V 1
Total Dissipation Ptot 100 W Tc=25℃ 1
Max. Operating Junction Temperature Tj 175 ℃ 1
Single Pulse Avalanche Energy EAS 424 mJ 1
Drain-source Voltage VDS 400 V VGS =0V, ID=250µA 2
Static Drain-to-Source on-Resistance RDS(on) 0.4 0.5 Ω VGS =10V, ID=5A 2
Gated Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250µA 2
Drain to Source leakage Current IDSS 1 µA VDS=400V, VGS = 0V 2
Gated Body Foward Leakage IGSS(F) 100 nA VGS = +30V 2
Gated Body Reverse Leakage IGSS(R) -100 nA VGS = -30V 2
Input Capacitance Ciss 1162 pF VGS =0V, VDS=25V, f=1.0MHZ 2
Output Capacitance Coss 160 pF 2
Reverse Transfer Capacitance Crss 17 pF 2
Turn-on Delay Time td(on) 16.5 nS VDD=200V,ID=10A, RG=10Ω 2
Turn-on Rise Time tr 20.8 nS 2
Turn-off Delay Time td(off) 46.9 nS 2
Turn-off Fall Time tf 18.5 nS 2
Total Gate Charge Qg 32 nC VDS=320V ID=10A VGS=10V 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 15 nC 2
S-D Current (Body Diode) ISD 10 A 2
Pulsed S-D Current (Body Diode) ISDM 40 A 2
Diode Forward Voltage VSD 1.5 V VGS =0V, IDS=18A 2
Reverse Recovery Time trr 216 nS TJ=25℃,IF=18A di/dt=100A/us 2
Reverse Recovery Charge Qrr 1640 µC 2
Junction-to-Case RθJC 1.5 ℃/W 2

CAD (KiCad official)

  • Symbol: IRF740
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: irf740-etched.step / irf740-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf740.step / irf740.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Minos datasheet (4 pp, sha256 2b045faac27811af, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF