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Generated by kicad-footprint-generator · KiCad file format 20260206

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irf740-etched.step	irf740: factory component page (tier=lcsc) · Ray	17d ago
irf740-hero.glb	irf740: hero GLB from the etched model (keeps the MPN mark) · Ray	17d ago
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IRF740

Minos · MOSFETs · TO-220

IRF740 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; controls the channel, with gate-to-source voltage limited to +/-30 V and threshold of 2.0 to 4.0 V at ID=250µA.
2	D	passive	Drain (also connected to the mounting tab); drain-to-source breakdown voltage 400 V with continuous drain current of 10 A at Tc=25℃.
3	S	passive	Source; body diode conducts from source to drain with continuous current of 10 A and pulsed current of 40 A.

Key specifications

Parameter	Value
Manufacturer	Minos
Package	TO-220
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Breakdown Voltage	VDSS			400	V		1
Drain Current (continuous)	ID			10	A	Tc=25℃	1
Drain Current (pulsed)	IDM			40	A		1
Gate to Source Voltage	VGS	-30		30	V		1
Total Dissipation	Ptot			100	W	Tc=25℃	1
Max. Operating Junction Temperature	Tj			175	℃		1
Single Pulse Avalanche Energy	EAS			424	mJ		1
Drain-source Voltage	VDS	400			V	VGS =0V, ID=250µA	2
Static Drain-to-Source on-Resistance	RDS(on)		0.4	0.5	Ω	VGS =10V, ID=5A	2
Gated Threshold Voltage	VGS(th)	2		4	V	VDS=VGS, ID=250µA	2
Drain to Source leakage Current	IDSS			1	µA	VDS=400V, VGS = 0V	2
Gated Body Foward Leakage	IGSS(F)			100	nA	VGS = +30V	2
Gated Body Reverse Leakage	IGSS(R)	-100			nA	VGS = -30V	2
Input Capacitance	Ciss		1162		pF	VGS =0V, VDS=25V, f=1.0MHZ	2
Output Capacitance	Coss		160		pF		2
Reverse Transfer Capacitance	Crss		17		pF		2
Turn-on Delay Time	td(on)		16.5		nS	VDD=200V,ID=10A, RG=10Ω	2
Turn-on Rise Time	tr		20.8		nS		2
Turn-off Delay Time	td(off)		46.9		nS		2
Turn-off Fall Time	tf		18.5		nS		2
Total Gate Charge	Qg		32		nC	VDS=320V ID=10A VGS=10V	2
Gate-Source Charge	Qgs		5		nC		2
Gate-Drain Charge	Qgd		15		nC		2
S-D Current (Body Diode)	ISD			10	A		2
Pulsed S-D Current (Body Diode)	ISDM			40	A		2
Diode Forward Voltage	VSD			1.5	V	VGS =0V, IDS=18A	2
Reverse Recovery Time	trr			216	nS	TJ=25℃,IF=18A di/dt=100A/us	2
Reverse Recovery Charge	Qrr			1640	µC		2
Junction-to-Case	RθJC		1.5		℃/W		2

CAD (KiCad official)

Symbol: IRF740
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: irf740-etched.step / irf740-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf740.step / irf740.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Minos datasheet (4 pp, sha256 2b045faac27811af, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF