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Ray irf7380trpbf: specified limits as data (metadata.characteristics, 25 rows from the datasheet) 0b562e6 17d ago

IRF7380TRPBF

Infineon Technologies · MOSFETs · SO-8

IRF7380TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1; the reference for the gate drive, with VGS rated at ±20 V maximum.
2 G1 input Gate of MOSFET 1; VGS is rated at ±20 V maximum and VGS(th) is 2.0 V minimum to 4.0 V maximum.
3 S2 passive Source terminal of MOSFET 2; the reference for the gate drive, with VGS rated at ±20 V maximum.
4 G2 input Gate of MOSFET 2; VGS is rated at ±20 V maximum and VGS(th) is 2.0 V minimum to 4.0 V maximum.
5 D2 passive Drain terminal of MOSFET 2; the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C.
6 D2 passive Drain terminal of MOSFET 2 (second lead of the same drain node); the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C.
7 D1 passive Drain terminal of MOSFET 1; the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C.
8 D1 passive Drain terminal of MOSFET 1 (second lead of the same drain node); the device is rated for VDS of 80 V and continuous ID of 3.6 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 80 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 61 73 mΩ VGS = 10V, ID = 2.2A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 80V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 64V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Forward Transconductance gfs 4.3 S VDS = 25V, ID = 2.2A 2
Total Gate Charge Qg 15 23 nC ID = 2.2A, VDS = 40V, VGS = 10V 2
Single Pulse Avalanche Energy EAS 75 mJ Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A 2
Avalanche Current IAR 2.2 A 2
Continuous Source Current (Body Diode) IS 3.6 A 2
Pulsed Source Current (Body Diode) ISM 29 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 2.2A, VGS = 0V 2
Drain-to-Source Voltage VDS 80 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 3.6 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current ID 2.9 A TA = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 29 A 1
Maximum Power Dissipation PD 2.3 W TA = 25°C 1
Linear Derating Factor 0.02 W/°C 1
Peak Diode Recovery dv/dt dv/dt 2 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Drain Lead Thermal Resistance RθJL 42 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W PCB mount, 1 inch square copper board 1

CAD (KiCad official)

  • Symbol: IRF7380TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irf7380trpbf-etched.step / irf7380trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7380trpbf.step / irf7380trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 e720b802f44710d3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF