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irf7380trpbf: specified limits as data (metadata.characteristics, 25 rows from the datasheet)

Ray ·0b562e6159 ·17d ago ·parent ab1bcd6
2 files changed +340−1
README.md+32
@@ -26,6 +26,38 @@ IRF7380TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 80 |  |  | V | VGS = 0V, ID = 250µA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) |  | 61 | 73 | mΩ | VGS = 10V, ID = 2.2A | 2 |+| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |+| Drain-to-Source Leakage Current | IDSS |  |  | 20 | µA | VDS = 80V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS |  |  | 250 | µA | VDS = 64V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS |  |  | 200 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS |  |  | -200 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 4.3 |  |  | S | VDS = 25V, ID = 2.2A | 2 |+| Total Gate Charge | Qg |  | 15 | 23 | nC | ID = 2.2A, VDS = 40V, VGS = 10V | 2 |+| Single Pulse Avalanche Energy | EAS |  |  | 75 | mJ | Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A | 2 |+| Avalanche Current | IAR |  |  | 2.2 | A |  | 2 |+| Continuous Source Current (Body Diode) | IS |  |  | 3.6 | A |  | 2 |+| Pulsed Source Current (Body Diode) | ISM |  |  | 29 | A |  | 2 |+| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ = 25°C, IS = 2.2A, VGS = 0V | 2 |+| Drain-to-Source Voltage | VDS |  |  | 80 | V |  | 1 |+| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |+| Continuous Drain Current | ID |  |  | 3.6 | A | TA = 25°C, VGS @ 10V | 1 |+| Continuous Drain Current | ID |  |  | 2.9 | A | TA = 100°C, VGS @ 10V | 1 |+| Pulsed Drain Current | IDM |  |  | 29 | A |  | 1 |+| Maximum Power Dissipation | PD |  |  | 2.3 | W | TA = 25°C | 1 |+| Linear Derating Factor |  |  |  | 0.02 | W/°C |  | 1 |+| Peak Diode Recovery dv/dt | dv/dt |  |  | 2 | V/ns |  | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |+| Junction-to-Drain Lead Thermal Resistance | RθJL |  |  | 42 | °C/W |  | 1 |+| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62.5 | °C/W | PCB mount, 1 inch square copper board | 1 |+ ## CAD (KiCad official)  - Symbol: `IRF7380TRPBF`
page.json+308−1
@@ -179,6 +179,313 @@       "Package": "SO-8",       "Category": "Transistors/Thyristors",       "Pins": "8"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "e720b802f44710d3",+      "rows": [+        {+          "name": "Drain-to-Source Breakdown Voltage",+          "symbol": "V(BR)DSS",+          "kind": "electrical",+          "unit": "V",+          "min": 80,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0V, ID = 250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Static Drain-to-Source On-Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 61,+          "max": 73,+          "conditions": "VGS = 10V, ID = 2.2A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS = VGS, ID = 250µA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 20,+          "conditions": "VDS = 80V, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Leakage Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 250,+          "conditions": "VDS = 64V, VGS = 0V, TJ = 125°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Forward Leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "VGS = 20V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Reverse Leakage",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": -200,+          "conditions": "VGS = -20V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance",+          "symbol": "gfs",+          "kind": "electrical",+          "unit": "S",+          "min": 4.3,+          "typ": null,+          "max": null,+          "conditions": "VDS = 25V, ID = 2.2A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 15,+          "max": 23,+          "conditions": "ID = 2.2A, VDS = 40V, VGS = 10V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Single Pulse Avalanche Energy",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 75,+          "conditions": "Starting TJ = 25°C, L = 31mH, RG = 25Ω, IAS = 2.2A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Avalanche Current",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.2,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Continuous Source Current (Body Diode)",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 3.6,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Source Current (Body Diode)",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 29,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.3,+          "conditions": "TJ = 25°C, IS = 2.2A, VGS = 0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-to-Source Voltage",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 80,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-to-Source Voltage",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 3.6,+          "conditions": "TA = 25°C, VGS @ 10V",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.9,+          "conditions": "TA = 100°C, VGS @ 10V",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 29,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 2.3,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Linear Derating Factor",+          "symbol": "",+          "kind": "absolute_maximum",+          "unit": "W/°C",+          "min": null,+          "typ": null,+          "max": 0.02,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Peak Diode Recovery dv/dt",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 2,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range",+          "symbol": "TJ, TSTG",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Drain Lead Thermal Resistance",+          "symbol": "RθJL",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 42,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-Ambient Thermal Resistance",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 62.5,+          "conditions": "PCB mount, 1 inch square copper board",+          "source_page": 1,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -220,4 +527,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}