# IRF7351PBF-HXY

**HXY MOSFET** · MOSFETs · SOP-8

IRF7351PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel), with VDS rated 60 V and continuous drain current 15 A. |
| 2 | G1 | input | Gate of MOSFET 1, with gate-source voltage rated ±20 V and threshold 1.0 to 2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel), with VDS rated 60 V and continuous drain current 15 A. |
| 4 | G2 | input | Gate of MOSFET 2, with gate-source voltage rated ±20 V and threshold 1.0 to 2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6, with VDS rated 60 V. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5, with VDS rated 60 V. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8, with VDS rated 60 V. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7, with VDS rated 60 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 12 | 15 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 15 | 20 | mΩ | VGS=4.5V, ID=10A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 15 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 180 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 2 |
| Drain source voltage | VDS |  |  | 60 | V | TA=25℃ | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V | TA=25℃ | 1 |
| Continuous drain current | ID |  |  | 15 | A | TA=25℃ | 1 |
| Pulsed drain current | ID, pulse |  |  | 180 | A | TA=25℃ | 1 |
| Power dissipation | PD |  |  | 60 | W | TA=25℃ | 1 |
| Operation and storage temperature | Tstg, Tj | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RθJC |  |  | 2.5 | °C/W |  | 1 |
| Input Capacitance | Ciss |  | 930 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 230 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 8 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 22 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Gate-Source Charge | Qgs |  | 4.5 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Gate-Drain Charge | Qgd |  | 3.5 |  | nC | VDS=30V, ID=20A, VGS=10V | 2 |
| Turn-on Delay Time | td(on) |  | 4.5 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-on Rise Time | tr |  | 2.7 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-off Delay Time | td(off) |  | 13.8 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Turn-off Fall Time | tf |  | 2.7 |  | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 18 |  | ns | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 12 |  | nC | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `IRF7351PBF-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `irf7351pbf-hxy-etched.step` / `irf7351pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf7351pbf-hxy.step` / `irf7351pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/irf7351pbf-hxy-datasheet.pdf) (6 pp, sha256 `d3d7ad9b3d55a629`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf7351pbf-hxy-datasheet.pdf)