component
IRF7351PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRF7351PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7351PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel), with VDS rated 60 V and continuous drain current 15 A. |
| 2 | G1 | input | Gate of MOSFET 1, with gate-source voltage rated ±20 V and threshold 1.0 to 2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel), with VDS rated 60 V and continuous drain current 15 A. |
| 4 | G2 | input | Gate of MOSFET 2, with gate-source voltage rated ±20 V and threshold 1.0 to 2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6, with VDS rated 60 V. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5, with VDS rated 60 V. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8, with VDS rated 60 V. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7, with VDS rated 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 12 | 15 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 15 | 20 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 15 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 180 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Drain source voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Continuous drain current | ID | 15 | A | TA=25℃ | 1 | ||
| Pulsed drain current | ID, pulse | 180 | A | TA=25℃ | 1 | ||
| Power dissipation | PD | 60 | W | TA=25℃ | 1 | ||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 2.5 | °C/W | 1 | |||
| Input Capacitance | Ciss | 930 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 230 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 3.5 | nC | VDS=30V, ID=20A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 4.5 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 2.7 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(off) | 13.8 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 2.7 | ns | VDD=30V, ID=20A, RG=1.6Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 18 | ns | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 12 | nC | TJ=25℃, IF=20A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
IRF7351PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7351pbf-hxy-etched.step/irf7351pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7351pbf-hxy.step/irf7351pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d3d7ad9b3d55a629, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).