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IRF7309TR

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7309TR

UMW · MOSFETs · SOP-8

IRF7309TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of channel 1 (S1, paired with G1 and D1) per the pinning table; the continuous body-diode source current is rated IS = 1.8 A for the N-channel.
2 G1 input Gate terminal of channel 1 (G1) per the pinning table; the gate-to-source voltage is rated ±20 V.
3 S2 passive Source terminal of channel 2 (S2, paired with G2 and D2) per the pinning table; the continuous body-diode source current is rated IS = -1.8 A for the P-channel.
4 G2 input Gate terminal of channel 2 (G2) per the pinning table; the gate-to-source voltage is rated ±20 V.
5 D2 passive Drain terminal (D1 or D2) per the pinning table; the drain-to-source breakdown voltage is 30 V for the N-channel and -30 V for the P-channel.
6 D2 passive Drain terminal (D1 or D2) per the pinning table; the continuous drain current at TA = 25°C is 4.7 A for the N-channel and -3.5 A for the P-channel.
7 D1 passive Drain terminal (D1 or D2) per the pinning table; the pulsed drain current is rated 16 A for the N-channel and -12 A for the P-channel.
8 D1 passive Drain terminal (D1 or D2) per the pinning table; the power dissipation (PCB mount) is 1.4 W at TA = 25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage (N-Ch) V(BR)DSS 30 V ID=250µA, VGS=0V 3
Drain-to-Source Breakdown Voltage (P-Ch) V(BR)DSS -30 V ID=-250µA, VGS=0V 3
Breakdown Voltage Temp Coefficient (N-Ch) ΔV(BR)DSS/ΔTJ 0.032 V/°C ID=1mA, Reference to 25°C 3
Breakdown Voltage Temp Coefficient (P-Ch) ΔV(BR)DSS/ΔTJ -0.037 V/°C ID=-1mA, Reference to 25°C 3
Static Drain-to-Source On-Resistance (N-Ch) RDS(ON) 50 mΩ VGS=10V, ID=2.4A 3
Static Drain-to-Source On-Resistance (N-Ch) RDS(ON) 80 mΩ VGS=4.5V, ID=2A 3
Static Drain-to-Source On-Resistance (P-Ch) RDS(ON) 100 mΩ VGS=-10V, ID=-1.8A 3
Static Drain-to-Source On-Resistance (P-Ch) RDS(ON) 140 mΩ VGS=-4.5V, ID=-1.5A 3
Gate Threshold Voltage (N-Ch) VGS(th) 1 V VDS=VGS, ID=250μA 3
Gate Threshold Voltage (P-Ch) VGS(th) -1 V VDS=VGS, ID=-250μA 3
Forward Transconductance (N-Ch) gfs 5.2 S 3
Forward Transconductance (P-Ch) gfs 2.5 S 3
Drain-to-Source Leakage Current (N-Ch) IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current (P-Ch) IDSS -1 µA VDS=-24V, VGS=0V 3
Drain-to-Source Leakage Current (N-Ch) IDSS 25 µA VDS=24V, VGS=0V, TJ=125°C 3
Drain-to-Source Leakage Current (P-Ch) IDSS -25 µA VDS=-24V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage Current IGSS -100 100 nA VGS=±20V 3
Turn-On Delay Time (N-Ch) tD(on) 6.8 ns VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω 3
Turn-On Delay Time (P-Ch) tD(on) 11 ns VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω 3
Rise Time (N-Ch) tr 21 ns VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω 3
Rise Time (P-Ch) tr 17 ns VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω 3
Turn-Off Delay Time (N-Ch) tD(off) 22 ns VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω 4
Turn-Off Delay Time (P-Ch) tD(off) 25 ns VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω 4
Fall Time (N-Ch) tf 7.7 ns VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω 4
Fall Time (P-Ch) tf 18 ns VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω 4
Input Capacitance (N-Ch) Ciss 520 pF VGS=0V, VDS=15V, f=1MHz 4
Input Capacitance (P-Ch) Ciss 440 pF VGS=0V, VDS=-15V, f=1MHz 4
Output Capacitance (N-Ch) Coss 180 pF VGS=0V, VDS=15V, f=1MHz 4
Output Capacitance (P-Ch) Coss 200 pF VGS=0V, VDS=-15V, f=1MHz 4
Reverse Transfer Capacitance (N-Ch) Crss 72 pF VGS=0V, VDS=15V, f=1MHz 4
Reverse Transfer Capacitance (P-Ch) Crss 93 pF VGS=0V, VDS=-15V, f=1MHz 4
Internal Drain Inductance LD 4 nH Between lead tip and center of die contact 4
Internal Source Inductance LS 6 nH Between lead tip and center of die contact 4
Diode Forward Voltage (N-Ch) VSD 1 V TJ=25°C, IS=1.8A, VGS=0V 4
Diode Forward Voltage (P-Ch) VSD -1 V TJ=25°C, IS=-1.8A, VGS=0V 4
Reverse Recovery Time (N-Ch) trr 71 ns TJ=25°C, IF=2.6A, di/dt=100A/µs 4
Reverse Recovery Time (P-Ch) trr 80 ns TJ=25°C, IF=-2.2A, di/dt=100A/µs 4
Reverse Recovery Charge (N-Ch) Qrr 84 nC TJ=25°C, IF=2.6A, di/dt=100A/µs 4
Reverse Recovery Charge (P-Ch) Qrr 99 nC TJ=25°C, IF=-2.2A, di/dt=100A/µs 4
Continuous Source Current (Body Diode) (N-Ch) IS 1.8 A 4
Continuous Source Current (Body Diode) (P-Ch) IS -1.8 A 4
Pulsed Source Current (Body Diode) (N-Ch) ISM 16 A 4
Pulsed Source Current (Body Diode) (P-Ch) ISM -12 A 4
Continuous Drain Current (N-Ch) ID 4.7 A VGS=10V, TA=25°C 1
Continuous Drain Current (P-Ch) ID -3.5 A VGS=10V, TA=25°C 1
Pulsed Drain Current (N-Ch) IDM 16 A Repetitive rating; pulse width limited by max. junction temperature 1
Pulsed Drain Current (P-Ch) IDM -12 A Repetitive rating; pulse width limited by max. junction temperature 1
Power Dissipation (PCB Mount) PD 1.4 W PCB Mount 1
Linear Derating Factor (PCB Mount) 0.011 W/°C PCB Mount 1
Gate-to-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 90 °C/W PCB Mount, steady state 2

CAD (KiCad official)

  • Symbol: IRF7309TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7309tr-etched.step / irf7309tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7309tr.step / irf7309tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (14 pp, sha256 6b7bbc0a061e6c06, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF