component
IRF7309TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7309TR
UMW · MOSFETs · SOP-8
IRF7309TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of channel 1 (S1, paired with G1 and D1) per the pinning table; the continuous body-diode source current is rated IS = 1.8 A for the N-channel. |
| 2 | G1 | input | Gate terminal of channel 1 (G1) per the pinning table; the gate-to-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source terminal of channel 2 (S2, paired with G2 and D2) per the pinning table; the continuous body-diode source current is rated IS = -1.8 A for the P-channel. |
| 4 | G2 | input | Gate terminal of channel 2 (G2) per the pinning table; the gate-to-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain terminal (D1 or D2) per the pinning table; the drain-to-source breakdown voltage is 30 V for the N-channel and -30 V for the P-channel. |
| 6 | D2 | passive | Drain terminal (D1 or D2) per the pinning table; the continuous drain current at TA = 25°C is 4.7 A for the N-channel and -3.5 A for the P-channel. |
| 7 | D1 | passive | Drain terminal (D1 or D2) per the pinning table; the pulsed drain current is rated 16 A for the N-channel and -12 A for the P-channel. |
| 8 | D1 | passive | Drain terminal (D1 or D2) per the pinning table; the power dissipation (PCB mount) is 1.4 W at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage (N-Ch) | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Drain-to-Source Breakdown Voltage (P-Ch) | V(BR)DSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp Coefficient (N-Ch) | ΔV(BR)DSS/ΔTJ | 0.032 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Breakdown Voltage Temp Coefficient (P-Ch) | ΔV(BR)DSS/ΔTJ | -0.037 | V/°C | ID=-1mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance (N-Ch) | RDS(ON) | 50 | mΩ | VGS=10V, ID=2.4A | 3 | ||
| Static Drain-to-Source On-Resistance (N-Ch) | RDS(ON) | 80 | mΩ | VGS=4.5V, ID=2A | 3 | ||
| Static Drain-to-Source On-Resistance (P-Ch) | RDS(ON) | 100 | mΩ | VGS=-10V, ID=-1.8A | 3 | ||
| Static Drain-to-Source On-Resistance (P-Ch) | RDS(ON) | 140 | mΩ | VGS=-4.5V, ID=-1.5A | 3 | ||
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 | V | VDS=VGS, ID=250μA | 3 | ||
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | V | VDS=VGS, ID=-250μA | 3 | ||
| Forward Transconductance (N-Ch) | gfs | 5.2 | S | 3 | |||
| Forward Transconductance (P-Ch) | gfs | 2.5 | S | 3 | |||
| Drain-to-Source Leakage Current (N-Ch) | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (P-Ch) | IDSS | -1 | µA | VDS=-24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (N-Ch) | IDSS | 25 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 | ||
| Drain-to-Source Leakage Current (P-Ch) | IDSS | -25 | µA | VDS=-24V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Turn-On Delay Time (N-Ch) | tD(on) | 6.8 | ns | VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω | 3 | ||
| Turn-On Delay Time (P-Ch) | tD(on) | 11 | ns | VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω | 3 | ||
| Rise Time (N-Ch) | tr | 21 | ns | VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω | 3 | ||
| Rise Time (P-Ch) | tr | 17 | ns | VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω | 3 | ||
| Turn-Off Delay Time (N-Ch) | tD(off) | 22 | ns | VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω | 4 | ||
| Turn-Off Delay Time (P-Ch) | tD(off) | 25 | ns | VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω | 4 | ||
| Fall Time (N-Ch) | tf | 7.7 | ns | VDD=10A, ID=2.6A, RG=6Ω, RD=3.8Ω | 4 | ||
| Fall Time (P-Ch) | tf | 18 | ns | VDD=-10A, ID=-2.2A, RG=6Ω, RD=4.5Ω | 4 | ||
| Input Capacitance (N-Ch) | Ciss | 520 | pF | VGS=0V, VDS=15V, f=1MHz | 4 | ||
| Input Capacitance (P-Ch) | Ciss | 440 | pF | VGS=0V, VDS=-15V, f=1MHz | 4 | ||
| Output Capacitance (N-Ch) | Coss | 180 | pF | VGS=0V, VDS=15V, f=1MHz | 4 | ||
| Output Capacitance (P-Ch) | Coss | 200 | pF | VGS=0V, VDS=-15V, f=1MHz | 4 | ||
| Reverse Transfer Capacitance (N-Ch) | Crss | 72 | pF | VGS=0V, VDS=15V, f=1MHz | 4 | ||
| Reverse Transfer Capacitance (P-Ch) | Crss | 93 | pF | VGS=0V, VDS=-15V, f=1MHz | 4 | ||
| Internal Drain Inductance | LD | 4 | nH | Between lead tip and center of die contact | 4 | ||
| Internal Source Inductance | LS | 6 | nH | Between lead tip and center of die contact | 4 | ||
| Diode Forward Voltage (N-Ch) | VSD | 1 | V | TJ=25°C, IS=1.8A, VGS=0V | 4 | ||
| Diode Forward Voltage (P-Ch) | VSD | -1 | V | TJ=25°C, IS=-1.8A, VGS=0V | 4 | ||
| Reverse Recovery Time (N-Ch) | trr | 71 | ns | TJ=25°C, IF=2.6A, di/dt=100A/µs | 4 | ||
| Reverse Recovery Time (P-Ch) | trr | 80 | ns | TJ=25°C, IF=-2.2A, di/dt=100A/µs | 4 | ||
| Reverse Recovery Charge (N-Ch) | Qrr | 84 | nC | TJ=25°C, IF=2.6A, di/dt=100A/µs | 4 | ||
| Reverse Recovery Charge (P-Ch) | Qrr | 99 | nC | TJ=25°C, IF=-2.2A, di/dt=100A/µs | 4 | ||
| Continuous Source Current (Body Diode) (N-Ch) | IS | 1.8 | A | 4 | |||
| Continuous Source Current (Body Diode) (P-Ch) | IS | -1.8 | A | 4 | |||
| Pulsed Source Current (Body Diode) (N-Ch) | ISM | 16 | A | 4 | |||
| Pulsed Source Current (Body Diode) (P-Ch) | ISM | -12 | A | 4 | |||
| Continuous Drain Current (N-Ch) | ID | 4.7 | A | VGS=10V, TA=25°C | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -3.5 | A | VGS=10V, TA=25°C | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 16 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -12 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Power Dissipation (PCB Mount) | PD | 1.4 | W | PCB Mount | 1 | ||
| Linear Derating Factor (PCB Mount) | 0.011 | W/°C | PCB Mount | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 90 | °C/W | PCB Mount, steady state | 2 |
CAD (KiCad official)
- Symbol:
IRF7309TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7309tr-etched.step/irf7309tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7309tr.step/irf7309tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (14 pp, sha256
6b7bbc0a061e6c06, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).