# IRF720PBF

**Vishay Intertech** · Pre-ordered Chips · TO-220AB

IRF720PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and a threshold VGS(th) of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; connected to the mounting tab, rated for VDS up to 400 V and continuous ID of 3.3 A at TC = 25 °C. |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous diode current IS up to 3.3 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Communication Interface Chip/UART/485/232 |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | 400 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 | 2 |
| Zero gate voltage drain current | IDSS |  |  | 25 | μA | VDS = 400 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 250 | μA | VDS = 320 V, VGS = 0 V, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 1.8 | Ω | VGS = 10 V, ID = 2.0 A | 2 |
| Forward transconductance | gfs | 1.7 |  |  | S | VDS = 50 V, ID = 2.0 A | 2 |
| Total gate charge | Qg |  |  | 20 | nC | VGS = 10 V, ID = 3.3 A, VDS = 320 V | 2 |
| Gate-source charge | Qgs |  |  | 3.3 | nC | VGS = 10 V, ID = 3.3 A, VDS = 320 V | 2 |
| Gate-drain charge | Qgd |  |  | 11 | nC | VGS = 10 V, ID = 3.3 A, VDS = 320 V | 2 |
| Gate input resistance | Rg | 1.2 |  | 7.3 | Ω | f = 1 MHz, open drain | 2 |
| Continuous source-drain diode current | IS |  |  | 3.3 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed diode forward current | ISM |  |  | 13 | A |  | 2 |
| Body diode voltage | VSD |  |  | 1.6 | V | TJ = 25 °C, IS = 3.3 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr |  | 270 | 600 | ns | TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs | 2 |
| Body diode reverse recovery charge | Qrr |  | 1.4 | 3 | μC | TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs | 2 |
| Drain-source voltage | VDS |  |  | 400 | V | TC = 25 °C | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 3.3 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous drain current | ID |  |  | 2.1 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed drain current | IDM |  |  | 13 | A | TC = 25 °C | 1 |
| Linear derating factor |  |  |  | 0.4 | W/°C | TC = 25 °C | 1 |
| Single pulse avalanche energy | EAS |  |  | 190 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 30 mH, Rg = 25 Ω, IAS = 3.3 A | 1 |
| Repetitive avalanche current | IAR |  |  | 3.3 | A | TC = 25 °C | 1 |
| Repetitive avalanche energy | EAR |  |  | 5 | mJ | TC = 25 °C | 1 |
| Maximum power dissipation | PD |  |  | 50 | W | TC = 25 °C | 1 |
| Peak diode recovery dV/dt | dV/dt |  |  | 4 | V/ns | ISD ≤ 3.3 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering recommendations (peak temperature) |  |  |  | 300 | °C | For 10 s, 1.6 mm from case | 1 |
| Maximum junction-to-ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum junction-to-case (drain) | RthJC |  |  | 2.5 | °C/W |  | 2 |
| Case-to-sink, flat, greased surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| VDS temperature coefficient | ΔVDS/TJ |  | 0.51 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Input capacitance | Ciss |  | 410 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output capacitance | Coss |  | 120 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 47 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Turn-on delay time | td(on) |  | 10 |  | ns | VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω | 2 |
| Rise time | tr |  | 14 |  | ns | VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω | 2 |
| Turn-off delay time | td(off) |  | 30 |  | ns | VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω | 2 |
| Fall time | tf |  | 13 |  | ns | VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω | 2 |
| Internal drain inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal source inductance | LS |  | 7.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |

## CAD (KiCad official)

- Symbol: `IRF720PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf720pbf-etched.step` / `irf720pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf720pbf.step` / `irf720pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](docs/irf720pbf-datasheet.pdf) (7 pp, sha256 `171a1ad49d23a00a`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf720pbf-datasheet.pdf)