component

IRF720PBF

Public Made by Adom

by adom

Vishay Intertech Pre-ordered Chips, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRF720PBF

Vishay Intertech · Pre-ordered Chips · TO-220AB

IRF720PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and a threshold VGS(th) of 2.0 to 4.0 V.
2 D passive Drain; connected to the mounting tab, rated for VDS up to 400 V and continuous ID of 3.3 A at TC = 25 °C.
3 S passive Source; the body diode runs from source to drain, with continuous diode current IS up to 3.3 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Communication Interface Chip/UART/485/232
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS 400 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 2
Zero gate voltage drain current IDSS 25 μA VDS = 400 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 250 μA VDS = 320 V, VGS = 0 V, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 1.8 Ω VGS = 10 V, ID = 2.0 A 2
Forward transconductance gfs 1.7 S VDS = 50 V, ID = 2.0 A 2
Total gate charge Qg 20 nC VGS = 10 V, ID = 3.3 A, VDS = 320 V 2
Gate-source charge Qgs 3.3 nC VGS = 10 V, ID = 3.3 A, VDS = 320 V 2
Gate-drain charge Qgd 11 nC VGS = 10 V, ID = 3.3 A, VDS = 320 V 2
Gate input resistance Rg 1.2 7.3 Ω f = 1 MHz, open drain 2
Continuous source-drain diode current IS 3.3 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed diode forward current ISM 13 A 2
Body diode voltage VSD 1.6 V TJ = 25 °C, IS = 3.3 A, VGS = 0 V 2
Body diode reverse recovery time trr 270 600 ns TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs 2
Body diode reverse recovery charge Qrr 1.4 3 μC TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs 2
Drain-source voltage VDS 400 V TC = 25 °C 1
Gate-source voltage VGS -20 20 V TC = 25 °C 1
Continuous drain current ID 3.3 A VGS at 10 V, TC = 25 °C 1
Continuous drain current ID 2.1 A VGS at 10 V, TC = 100 °C 1
Pulsed drain current IDM 13 A TC = 25 °C 1
Linear derating factor 0.4 W/°C TC = 25 °C 1
Single pulse avalanche energy EAS 190 mJ VDD = 50 V, starting TJ = 25 °C, L = 30 mH, Rg = 25 Ω, IAS = 3.3 A 1
Repetitive avalanche current IAR 3.3 A TC = 25 °C 1
Repetitive avalanche energy EAR 5 mJ TC = 25 °C 1
Maximum power dissipation PD 50 W TC = 25 °C 1
Peak diode recovery dV/dt dV/dt 4 V/ns ISD ≤ 3.3 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Maximum junction-to-ambient RthJA 62 °C/W 2
Maximum junction-to-case (drain) RthJC 2.5 °C/W 2
Case-to-sink, flat, greased surface RthCS 0.5 °C/W 2
VDS temperature coefficient ΔVDS/TJ 0.51 V/°C Reference to 25 °C, ID = 1 mA 2
Input capacitance Ciss 410 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output capacitance Coss 120 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse transfer capacitance Crss 47 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-on delay time td(on) 10 ns VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω 2
Rise time tr 14 ns VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω 2
Turn-off delay time td(off) 30 ns VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω 2
Fall time tf 13 ns VDD = 200 V, ID = 3.3 A, Rg = 18 Ω, RD = 56 Ω 2
Internal drain inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal source inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: IRF720PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf720pbf-etched.step / irf720pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf720pbf.step / irf720pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (7 pp, sha256 171a1ad49d23a00a, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF