component

IRF7105TRPBF-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf7105trpbf-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
irf7105trpbf-hxy / README.md
History Download
Ray Publish 0.1.0 8b88969 14d ago

IRF7105TRPBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF7105TRPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1), rated VDS 30V, ID 6A at TA=25°C.
2 G1 input Gate of the N-channel MOSFET (channel 1), VGS maximum ±20V, usable with gate drive as low as 4.5V.
3 S2 passive Source of the P-channel MOSFET (channel 2), rated VDS -30V, ID -5.5A at TA=25°C.
4 G2 input Gate of the P-channel MOSFET (channel 2), VGS maximum ±20V, usable with gate drive as low as -4.5V.
5 D2 passive Drain of the P-channel MOSFET (channel 2), pulsed drain current IDM -30A; pins 5 and 6 are both D2.
6 D2 passive Drain of the P-channel MOSFET (channel 2), pulsed drain current IDM -30A; pins 5 and 6 are both D2.
7 D1 passive Drain of the N-channel MOSFET (channel 1), pulsed drain current IDM 30A; pins 7 and 8 are both D1.
8 D1 passive Drain of the N-channel MOSFET (channel 1), pulsed drain current IDM 30A; pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
N-Ch Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
N-Ch Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
N-Ch Gate Threshold Voltage VGS(th) 1.2 1.8 2.4 V VDS=VGS ID=250µA 2
N-Ch On state drain current ID(ON) 30 A VGS=10V, VDS=5V 2
N-Ch Static Drain-Source On-Resistance RDS(ON) 16 22 mΩ VGS=10V, ID=6A 2
N-Ch Forward Transconductance gFS 15 S VDS=5V, ID=6A 2
N-Ch Diode Forward Voltage VSD 0.76 1 V IS=1A, VGS=0V 2
N-Ch Maximum Body-Diode Continuous Current IS 2.5 A 2
N-Ch Input Capacitance Ciss 200 255 310 pF VGS=0V, VDS=15V, f=1MHz 2
N-Ch Output Capacitance Coss 30 45 60 pF VGS=0V, VDS=15V, f=1MHz 2
N-Ch Reverse Transfer Capacitance Crss 20 35 50 pF VGS=0V, VDS=15V, f=1MHz 2
N-Ch Gate resistance Rg 1.6 3.25 4.9 Ω VGS=0V, VDS=0V, f=1MHz 2
N-Ch Total Gate Charge (10V) Qg 4 5.2 6 nC VGS=10V, VDS=15V, ID=6A 2
N-Ch Total Gate Charge (4.5V) Qg 2 2.55 3 nC 2
N-Ch Body Diode Reverse Recovery Time trr 8.5 12 ns IF=6A, dI/dt=100A/µs 2
N-Ch Body Diode Reverse Recovery Charge Qrr 2.2 3 nC IF=6A, dI/dt=100A/µs 2
P-Ch Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 6
P-Ch Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 6
P-Ch Zero Gate Voltage Drain Current IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 6
P-Ch Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 6
P-Ch Gate Threshold Voltage VGS(th) -1.3 -1.85 -2.4 V VDS=VGS ID=-250µA 6
P-Ch On state drain current ID(ON) -30 A VGS=-10V, VDS=-5V 6
P-Ch Forward Transconductance gFS 18 S VDS=-5V, ID=-6.5A 6
P-Ch Diode Forward Voltage VSD -0.8 -1 V IS=-1A, VGS=0V 6
P-Ch Maximum Body-Diode Continuous Current IS -2.5 A 6
P-Ch Gate resistance Rg 1.5 3.2 5 Ω VGS=0V, VDS=0V, f=1MHz 6
P-Ch Total Gate Charge (10V) Qg 13.6 16 nC VGS=10V, VDS=-15V, ID=-6.5A 6
P-Ch Total Gate Charge (4.5V) Qg 6.7 8 nC 6
N-Ch Drain-Source Voltage VDS 30 V 1
P-Ch Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V N and P channel 1
N-Ch Continuous Drain Current ID 6 A TA=25℃, VGS @ 10V 1
N-Ch Continuous Drain Current ID 5 A TA=70℃, VGS @ 10V 1
P-Ch Continuous Drain Current ID -5.5 A TA=25℃, VGS @ 10V 1
P-Ch Continuous Drain Current ID -4.3 A TA=70℃, VGS @ 10V 1
N-Ch Pulsed Drain Current IDM 30 A 1
P-Ch Pulsed Drain Current IDM -30 A 1
N-Ch Single Pulse Avalanche Energy EAS 5 mJ 1
P-Ch Single Pulse Avalanche Energy EAS 26 mJ 1
Total Power Dissipation PD 2 W TA=25℃, each channel 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W 1
Thermal Resistance Junction-Case RθJC 40 ℃/W 1

CAD (KiCad official)

  • Symbol: IRF7105TRPBF-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7105trpbf-hxy-etched.step / irf7105trpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7105trpbf-hxy.step / irf7105trpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (11 pp, sha256 5e6cf1055a55d028, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF