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IRF7105TRPBF-HXY

HXY MOSFET · MOSFETs · SOP-8

IRF7105TRPBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of the N-channel MOSFET (channel 1), rated VDS 30V, ID 6A at TA=25°C.
2	G1	input	Gate of the N-channel MOSFET (channel 1), VGS maximum ±20V, usable with gate drive as low as 4.5V.
3	S2	passive	Source of the P-channel MOSFET (channel 2), rated VDS -30V, ID -5.5A at TA=25°C.
4	G2	input	Gate of the P-channel MOSFET (channel 2), VGS maximum ±20V, usable with gate drive as low as -4.5V.
5	D2	passive	Drain of the P-channel MOSFET (channel 2), pulsed drain current IDM -30A; pins 5 and 6 are both D2.
6	D2	passive	Drain of the P-channel MOSFET (channel 2), pulsed drain current IDM -30A; pins 5 and 6 are both D2.
7	D1	passive	Drain of the N-channel MOSFET (channel 1), pulsed drain current IDM 30A; pins 7 and 8 are both D1.
8	D1	passive	Drain of the N-channel MOSFET (channel 1), pulsed drain current IDM 30A; pins 7 and 8 are both D1.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	SOP-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
N-Ch Drain-Source Breakdown Voltage	BVDSS	30			V	ID=250µA, VGS=0V	2
N-Ch Zero Gate Voltage Drain Current	IDSS			1	µA	VDS=30V, VGS=0V	2
N-Ch Zero Gate Voltage Drain Current	IDSS			5	µA	VDS=30V, VGS=0V, TJ=55°C	2
N-Ch Gate-Body leakage current	IGSS	-100		100	nA	VDS=0V, VGS=±20V	2
N-Ch Gate Threshold Voltage	VGS(th)	1.2	1.8	2.4	V	VDS=VGS ID=250µA	2
N-Ch On state drain current	ID(ON)	30			A	VGS=10V, VDS=5V	2
N-Ch Static Drain-Source On-Resistance	RDS(ON)		16	22	mΩ	VGS=10V, ID=6A	2
N-Ch Forward Transconductance	gFS		15		S	VDS=5V, ID=6A	2
N-Ch Diode Forward Voltage	VSD		0.76	1	V	IS=1A, VGS=0V	2
N-Ch Maximum Body-Diode Continuous Current	IS			2.5	A		2
N-Ch Input Capacitance	Ciss	200	255	310	pF	VGS=0V, VDS=15V, f=1MHz	2
N-Ch Output Capacitance	Coss	30	45	60	pF	VGS=0V, VDS=15V, f=1MHz	2
N-Ch Reverse Transfer Capacitance	Crss	20	35	50	pF	VGS=0V, VDS=15V, f=1MHz	2
N-Ch Gate resistance	Rg	1.6	3.25	4.9	Ω	VGS=0V, VDS=0V, f=1MHz	2
N-Ch Total Gate Charge (10V)	Qg	4	5.2	6	nC	VGS=10V, VDS=15V, ID=6A	2
N-Ch Total Gate Charge (4.5V)	Qg	2	2.55	3	nC		2
N-Ch Body Diode Reverse Recovery Time	trr		8.5	12	ns	IF=6A, dI/dt=100A/µs	2
N-Ch Body Diode Reverse Recovery Charge	Qrr		2.2	3	nC	IF=6A, dI/dt=100A/µs	2
P-Ch Drain-Source Breakdown Voltage	BVDSS			-30	V	ID=-250µA, VGS=0V	6
P-Ch Zero Gate Voltage Drain Current	IDSS			-1	µA	VDS=-30V, VGS=0V	6
P-Ch Zero Gate Voltage Drain Current	IDSS			-5	µA	VDS=-30V, VGS=0V, TJ=55°C	6
P-Ch Gate-Body leakage current	IGSS	-100		100	nA	VDS=0V, VGS=±20V	6
P-Ch Gate Threshold Voltage	VGS(th)	-1.3	-1.85	-2.4	V	VDS=VGS ID=-250µA	6
P-Ch On state drain current	ID(ON)	-30			A	VGS=-10V, VDS=-5V	6
P-Ch Forward Transconductance	gFS		18		S	VDS=-5V, ID=-6.5A	6
P-Ch Diode Forward Voltage	VSD		-0.8	-1	V	IS=-1A, VGS=0V	6
P-Ch Maximum Body-Diode Continuous Current	IS			-2.5	A		6
P-Ch Gate resistance	Rg	1.5	3.2	5	Ω	VGS=0V, VDS=0V, f=1MHz	6
P-Ch Total Gate Charge (10V)	Qg		13.6	16	nC	VGS=10V, VDS=-15V, ID=-6.5A	6
P-Ch Total Gate Charge (4.5V)	Qg		6.7	8	nC		6
N-Ch Drain-Source Voltage	VDS			30	V		1
P-Ch Drain-Source Voltage	VDS			-30	V		1
Gate-Source Voltage	VGS	-20		20	V	N and P channel	1
N-Ch Continuous Drain Current	ID			6	A	TA=25℃, VGS @ 10V	1
N-Ch Continuous Drain Current	ID			5	A	TA=70℃, VGS @ 10V	1
P-Ch Continuous Drain Current	ID			-5.5	A	TA=25℃, VGS @ 10V	1
P-Ch Continuous Drain Current	ID			-4.3	A	TA=70℃, VGS @ 10V	1
N-Ch Pulsed Drain Current	IDM			30	A		1
P-Ch Pulsed Drain Current	IDM			-30	A		1
N-Ch Single Pulse Avalanche Energy	EAS			5	mJ		1
P-Ch Single Pulse Avalanche Energy	EAS			26	mJ		1
Total Power Dissipation	PD			2	W	TA=25℃, each channel	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-Ambient	RθJA			62.5	℃/W		1
Thermal Resistance Junction-Case	RθJC			40	℃/W		1

CAD (KiCad official)

Symbol: IRF7105TRPBF-HXY
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: irf7105trpbf-hxy-etched.step / irf7105trpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7105trpbf-hxy.step / irf7105trpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (11 pp, sha256 5e6cf1055a55d028, retrieved 2026-10-26, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF