# IRF5803TR

**UMW** · MOSFETs · SOT-23-6

IRF5803TR from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | DRAIN terminal, tied internally with pins 2, 5 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C. |
| 2 | D | passive | DRAIN terminal, tied internally with pins 1, 5 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C. |
| 3 | G | input | GATE terminal; gate-to-source voltage is rated at ±20V, and the part is specified for VGS = -10V and -4.5V drive. |
| 4 | S | passive | SOURCE terminal; the body-diode continuous source current IS is rated at -2A. |
| 5 | D | passive | DRAIN terminal, tied internally with pins 1, 2 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C. |
| 6 | D | passive | DRAIN terminal, tied internally with pins 1, 2 and 5; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -3 | V | VDS=VGS, ID=-250μA | 3 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | -0.03 |  | V/°C | ID=-1mA, Reference to 25°C | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 70 | mΩ | VGS=-10V, ID=-3.4A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 100 | mΩ | VGS=-4.5V, ID=-2.7A | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | -100 | nA | VGS=-20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | 100 | nA | VGS=20V | 3 |
| Drain-to-Source Leakage Current (TJ=150°C) | IDSS |  |  | -25 | µA | VDS=-32V,VGS=0V,TJ=150°C | 3 |
| Forward Transconductance | gFS | 4 |  |  | S |  | 3 |
| Absolute max Drain-Source Voltage | VDS |  |  | -40 | V |  | 1 |
| Continuous Drain Current, VGS=-10V, TA=25°C | ID |  |  | -3.4 | A | TA=25°C | 1 |
| Continuous Drain Current, VGS=-10V, TA=70°C | ID |  |  | -2.7 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -27 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TA=70°C | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Storage and Junction Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  | 62.5 |  | °C/W | Surface mounted on 1 in square Cu board | 2 |

## CAD (KiCad official)

- Symbol: `IRF5803TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `irf5803tr-etched.step` / `irf5803tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf5803tr.step` / `irf5803tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/irf5803tr-datasheet.pdf) (12 pp, sha256 `01b0a4bd4c502cb3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf5803tr-datasheet.pdf)