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IRF5803TR

Public Made by Adom

by adom

UMW MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF5803TR

UMW · MOSFETs · SOT-23-6

IRF5803TR from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive DRAIN terminal, tied internally with pins 2, 5 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C.
2 D passive DRAIN terminal, tied internally with pins 1, 5 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C.
3 G input GATE terminal; gate-to-source voltage is rated at ±20V, and the part is specified for VGS = -10V and -4.5V drive.
4 S passive SOURCE terminal; the body-diode continuous source current IS is rated at -2A.
5 D passive DRAIN terminal, tied internally with pins 1, 2 and 6; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C.
6 D passive DRAIN terminal, tied internally with pins 1, 2 and 5; the device is rated for VDS = -40V and continuous drain current ID = -3.4A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -40 V ID=-250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ -0.03 V/°C ID=-1mA, Reference to 25°C 3
Static Drain-to-Source On-Resistance RDS(ON) 70 mΩ VGS=-10V, ID=-3.4A 3
Static Drain-to-Source On-Resistance RDS(ON) 100 mΩ VGS=-4.5V, ID=-2.7A 3
Gate-to-Source Forward Leakage IGSS -100 nA VGS=-20V 3
Gate-to-Source Reverse Leakage IGSS 100 nA VGS=20V 3
Drain-to-Source Leakage Current (TJ=150°C) IDSS -25 µA VDS=-32V,VGS=0V,TJ=150°C 3
Forward Transconductance gFS 4 S 3
Absolute max Drain-Source Voltage VDS -40 V 1
Continuous Drain Current, VGS=-10V, TA=25°C ID -3.4 A TA=25°C 1
Continuous Drain Current, VGS=-10V, TA=70°C ID -2.7 A TA=70°C 1
Pulsed Drain Current IDM -27 A 1
Maximum Power Dissipation PD 2 W TA=25°C 1
Maximum Power Dissipation PD 1.3 W TA=70°C 1
Gate-to-Source Voltage VGS -20 20 V 2
Storage and Junction Temperature Range TJ, TSTG -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W Surface mounted on 1 in square Cu board 2

CAD (KiCad official)

  • Symbol: IRF5803TR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: irf5803tr-etched.step / irf5803tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf5803tr.step / irf5803tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 01b0a4bd4c502cb3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF