# IRF5803B

**Cmos** · MOSFETs · TSOP-6

IRF5803B from Cmos, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET (pin 1, tied to the other drain pins); drain-source voltage rated -60 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; continuous drain current -4 A at TA=25°C, pulsed -16 A. |
| 3 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V, threshold -1 to -3 V. |
| 4 | S | passive | Source of the P-channel MOSFET. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -4 |  |  | A | TA = 25℃ | 1 |
| Pulsed Drain Current | IDM | -16 |  |  | A |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 62.5 | ℃/W | Surface mounted on 1 in square Cu board (Note 1) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 98 | mΩ | VGS=-10V, ID=-3.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 110 | mΩ | VGS=-4.5V, ID=-2.5A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -3 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-48V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS=0V | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-2A | 2 |

## CAD (KiCad official)

- Symbol: `IRF5803B`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `irf5803b-etched.step` / `irf5803b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf5803b.step` / `irf5803b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos datasheet](docs/irf5803b-datasheet.pdf) (2 pp, sha256 `273ef442ebb19923`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf5803b-datasheet.pdf)