component
IRF5803B
Public Made by Adomby adom
Cmos MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| irf5803b-etched.glb | 9d ago |
| irf5803b-etched.step | 9d ago |
| irf5803b-hero.glb | 9d ago |
| irf5803b-hero.overlay.json | 9d ago |
| irf5803b.glb | 9d ago |
| irf5803b.kicad_mod | 9d ago |
| irf5803b.kicad_sym | 9d ago |
| irf5803b.lbr | 9d ago |
| irf5803b.step | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
IRF5803B
Cmos · MOSFETs · TSOP-6
IRF5803B from Cmos, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET (pin 1, tied to the other drain pins); drain-source voltage rated -60 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins; continuous drain current -4 A at TA=25°C, pulsed -16 A. |
| 3 | G | input | Gate of the P-channel MOSFET; gate-source voltage limit ±20 V, threshold -1 to -3 V. |
| 4 | S | passive | Source of the P-channel MOSFET. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TA = 25℃ | 1 | ||
| Pulsed Drain Current | IDM | -16 | A | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | Surface mounted on 1 in square Cu board (Note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 98 | mΩ | VGS=-10V, ID=-3.5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 110 | mΩ | VGS=-4.5V, ID=-2.5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-2A | 2 |
CAD (KiCad official)
- Symbol:
IRF5803B - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
irf5803b-etched.step/irf5803b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf5803b.step/irf5803b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (2 pp, sha256
273ef442ebb19923, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).