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IRF530NS-JSM
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JSMSEMI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF530NS-JSM
JSMSEMI · MOSFETs · TO-263
IRF530NS-JSM from JSMSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) of 2.0 V to 4.0 V at ID = 250 µA and an absolute maximum VGSS of ±20 V. |
| 2 | D | passive | Drain (also the mounting tab); VDSS is 100 V and continuous drain current ID is 33 A. |
| 3 | S | passive | Source; the continuous body-diode current IS is 33 A and the pulsed value ISM is 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | VGS = 0V | 1 | ||
| Continuous Drain Current | ID | 33 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 335 | mJ | Note 2: L=1mH, VDD=50V, RG=25Ω, starting TJ=25ºC | 1 | ||
| Single Pulse Avalanche Current | IAS | 22 | A | Note 1: repetitive rating | 1 | ||
| Repetitive Avalanche Energy | EAR | 201 | mJ | Note 1: repetitive rating | 1 | ||
| Power Dissipation | PD | 110 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V, TJ = 25ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 80V, VGS = 0V, TJ = 125ºC | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 30 | 38 | mΩ | VGS = 10V, ID = 15A | 2 | |
| Continuous Body Diode Current | IS | 33 | A | TC = 25 ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 120 | A | 2 | |||
| Body Diode Voltage | VSD | 2 | V | TJ = 25ºC, ISD = 15A, VGS = 0V | 2 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 1.14 | K/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RthJA | 60 | K/W | 1 |
CAD (KiCad official)
- Symbol:
IRF530NS-JSM - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
irf530ns-jsm-etched.step/irf530ns-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf530ns-jsm.step/irf530ns-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
347314cb4d0afe6d, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF530NS-JSM
**JSMSEMI** · MOSFETs · TO-263
IRF530NS-JSM from JSMSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(th) of 2.0 V to 4.0 V at ID = 250 µA and an absolute maximum VGSS of ±20 V. |
| 2 | D | passive | Drain (also the mounting tab); VDSS is 100 V and continuous drain current ID is 33 A. |
| 3 | S | passive | Source; the continuous body-diode current IS is 33 A and the pulsed value ISM is 120 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | VGS = 0V | 1 |
| Continuous Drain Current | ID | | | 33 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 120 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 335 | mJ | Note 2: L=1mH, VDD=50V, RG=25Ω, starting TJ=25ºC | 1 |
| Single Pulse Avalanche Current | IAS | | | 22 | A | Note 1: repetitive rating | 1 |
| Repetitive Avalanche Energy | EAR | | | 201 | mJ | Note 1: repetitive rating | 1 |
| Power Dissipation | PD | | | 110 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V, TJ = 25ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS = 80V, VGS = 0V, TJ = 125ºC | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 30 | 38 | mΩ | VGS = 10V, ID = 15A | 2 |
| Continuous Body Diode Current | IS | | | 33 | A | TC = 25 ºC | 2 |
| Pulsed Diode Forward Current | ISM | | | 120 | A | | 2 |
| Body Diode Voltage | VSD | | | 2 | V | TJ = 25ºC, ISD = 15A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Case | RthJC | | 1.14 | | K/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 60 | | K/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRF530NS-JSM`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `irf530ns-jsm-etched.step` / `irf530ns-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf530ns-jsm.step` / `irf530ns-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078034056355840) (6 pp, sha256 `347314cb4d0afe6d`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf530ns-jsm-datasheet.pdf)