main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers irf530ns-jsm: viewers · Ray 16d ago
irf530ns-jsm-etched.glb Publish 0.1.0 · Ray 16d ago
irf530ns-jsm-etched.step irf530ns-jsm: factory component page (tier=lcsc) · Ray 16d ago
irf530ns-jsm-hero.glb irf530ns-jsm: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
irf530ns-jsm-hero.overlay.json Publish 0.1.0 · Ray 16d ago
irf530ns-jsm.glb Publish 0.1.0 · Ray 16d ago
irf530ns-jsm.kicad_mod Publish 0.1.0 · Ray 16d ago
irf530ns-jsm.kicad_sym Publish 0.1.0 · Ray 16d ago
irf530ns-jsm.lbr Publish 0.1.0 · Ray 16d ago
irf530ns-jsm.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

IRF530NS-JSM

JSMSEMI · MOSFETs · TO-263

IRF530NS-JSM from JSMSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) of 2.0 V to 4.0 V at ID = 250 µA and an absolute maximum VGSS of ±20 V.
2 D passive Drain (also the mounting tab); VDSS is 100 V and continuous drain current ID is 33 A.
3 S passive Source; the continuous body-diode current IS is 33 A and the pulsed value ISM is 120 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V VGS = 0V 1
Continuous Drain Current ID 33 A TC = 25ºC 1
Pulsed Drain Current IDM 120 A Note 1: repetitive rating, pulse width limited by max junction temperature 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulse Avalanche Energy EAS 335 mJ Note 2: L=1mH, VDD=50V, RG=25Ω, starting TJ=25ºC 1
Single Pulse Avalanche Current IAS 22 A Note 1: repetitive rating 1
Repetitive Avalanche Energy EAR 201 mJ Note 1: repetitive rating 1
Power Dissipation PD 110 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 80V, VGS = 0V, TJ = 125ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 30 38 mΩ VGS = 10V, ID = 15A 2
Continuous Body Diode Current IS 33 A TC = 25 ºC 2
Pulsed Diode Forward Current ISM 120 A 2
Body Diode Voltage VSD 2 V TJ = 25ºC, ISD = 15A, VGS = 0V 2
Thermal Resistance, Junction-to-Case RthJC 1.14 K/W 1
Thermal Resistance, Junction-to-Ambient RthJA 60 K/W 1

CAD (KiCad official)

  • Symbol: IRF530NS-JSM
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irf530ns-jsm-etched.step / irf530ns-jsm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf530ns-jsm.step / irf530ns-jsm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (6 pp, sha256 347314cb4d0afe6d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF