# IRF5305PBF

**UMW** · MOSFETs · TO-220

IRF5305PBF from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; gate-to-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the MOSFET; rated for continuous drain current of -31 A at TC=25°C with VGS=-10 V and a drain-source voltage of -60 V. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for gate-to-source voltage; the body diode is referenced between source and drain. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 |  |  | V | ID=-250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -2 |  | -4 | V | VDS=VGS, ID=-250μA | 3 |
| Forward Transconductance | gFS | 8 |  |  | S | VDS=-25V, ID=-16A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 60 | mΩ | VGS=-10V, ID=-16A | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | -25 | µA | VDS=-55V, VGS=0V | 3 |
| Drain-to-Source Leakage Current (TJ=150°C) | IDSS |  |  | -250 | µA | VDS=-44V, VGS=0V, TJ=150°C | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-20V | 3 |
| Continuous Source Current (Body Diode) | IS |  |  | -31 | A | TJ=25°C, IS=-16A, VGS=0V | 4 |
| Pulsed Source Current (Body Diode) | ISM |  |  | -110 | A |  | 4 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ |  | -0.034 |  | V/°C | ID=-1mA, Reference to 25°C | 3 |
| Total Gate Charge | Qg |  | 63 |  | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 |
| Gate-to-Source Charge | Qgs |  | 13 |  | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 29 |  | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 |
| Turn-On Delay Time | tD(on) |  | 14 |  | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 |
| Rise Time | tr |  | 66 |  | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 |
| Turn-Off Delay Time | tD(off) |  | 39 |  | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 |
| Fall Time | tf |  | 63 |  | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 |
| Input Capacitance | Ciss |  | 1200 |  | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 |
| Output Capacitance | Coss |  | 520 |  | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 250 |  | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Internal Source Inductance | LS |  | 7.5 |  | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 |
| Diode Forward Voltage | VSD |  | -1.3 |  | V | TJ=25°C, IS=-16A, VGS=0V | 4 |
| Reverse Recovery Time | trr |  | 110 |  | ns | TJ=25°C, IF=-16A, dI/dt=-100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  | 250 |  | nC | TJ=25°C, IF=-16A, dI/dt=-100A/µs | 4 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -31 | A | VGS=-10V, TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | -22 | A | VGS=-10V, TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | -110 | A |  | 1 |
| Power Dissipation | PD |  |  | 110 | W | TC=25°C | 1 |
| Linear Derating Factor |  |  | 0.71 |  | W/°C |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 280 | mJ | VDD=-25V, starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A | 1 |
| Avalanche Current | IAR |  |  | -16 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 11 | mJ |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | -5 | V/ns | ISD ≤-16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature |  |  |  | 300 | °C | 1.6mm from case, 10 seconds | 1 |
| Mounting Torque |  |  |  | 10 | lbf•in | 6-32 or M3 screw | 1 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 1.4 | °C/W |  | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62 | °C/W |  | 2 |
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS |  | 0.5 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `IRF5305PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irf5305pbf-etched.step` / `irf5305pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf5305pbf.step` / `irf5305pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8763509904407973888) (12 pp, sha256 `adb76548fb8d5f09`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf5305pbf-datasheet.pdf)