component
IRF5305PBF
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRF5305PBF
UMW · MOSFETs · TO-220
IRF5305PBF from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; gate-to-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the MOSFET; rated for continuous drain current of -31 A at TC=25°C with VGS=-10 V and a drain-source voltage of -60 V. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for gate-to-source voltage; the body diode is referenced between source and drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | ID=-250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -2 | -4 | V | VDS=VGS, ID=-250μA | 3 | |
| Forward Transconductance | gFS | 8 | S | VDS=-25V, ID=-16A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 60 | mΩ | VGS=-10V, ID=-16A | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS=-55V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current (TJ=150°C) | IDSS | -250 | µA | VDS=-44V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Continuous Source Current (Body Diode) | IS | -31 | A | TJ=25°C, IS=-16A, VGS=0V | 4 | ||
| Pulsed Source Current (Body Diode) | ISM | -110 | A | 4 | |||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | -0.034 | V/°C | ID=-1mA, Reference to 25°C | 3 | ||
| Total Gate Charge | Qg | 63 | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 | ||
| Gate-to-Source Charge | Qgs | 13 | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 29 | nC | VDS=-44V, VGS=-10V, ID=-16A | 3 | ||
| Turn-On Delay Time | tD(on) | 14 | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 | ||
| Rise Time | tr | 66 | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 39 | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 | ||
| Fall Time | tf | 63 | ns | VDD=-28V, ID=-16A, RG=6.8Ω, RD=1.6Ω | 3 | ||
| Input Capacitance | Ciss | 1200 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 520 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 250 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Internal Source Inductance | LS | 7.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact | 3 | ||
| Diode Forward Voltage | VSD | -1.3 | V | TJ=25°C, IS=-16A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 110 | ns | TJ=25°C, IF=-16A, dI/dt=-100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 250 | nC | TJ=25°C, IF=-16A, dI/dt=-100A/µs | 4 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -31 | A | VGS=-10V, TC=25°C | 1 | ||
| Continuous Drain Current | ID | -22 | A | VGS=-10V, TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -110 | A | 1 | |||
| Power Dissipation | PD | 110 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.71 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 280 | mJ | VDD=-25V, starting TJ=25°C, L=2.1mH, RG=25Ω, IAS=-16A | 1 | ||
| Avalanche Current | IAR | -16 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 11 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | ISD ≤-16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 1.6mm from case, 10 seconds | 1 | |||
| Mounting Torque | 10 | lbf•in | 6-32 or M3 screw | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.4 | °C/W | 2 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 2 | |||
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRF5305PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irf5305pbf-etched.step/irf5305pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf5305pbf.step/irf5305pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
adb76548fb8d5f09, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).