component
IRF520PBF
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Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF520PBF
Vishay Intertech · MOSFETs · TO-220AB
IRF520PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated at VDS = 100 V with 9.2 A continuous drain current at TC = 25 °C; the datasheet's thermal resistance is specified junction-to-case (Drain). |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated at 9.2 A continuous source-drain current and 37 A pulsed diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 9.2 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | 1 | |||
| Linear Derating Factor | 0.4 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | 1 | |||
| Repetitive Avalanche Current | IAR | 9.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 6 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 2.5 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.27 | Ω | VGS = 10 V, ID = 5.5 A | 2 | ||
| Forward Transconductance | gfs | 2.7 | S | VDS = 50 V, ID = 5.5 A | 2 | ||
| Total Gate Charge | Qg | 16 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b | 2 | ||
| Gate-Source Charge | Qgs | 4.4 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 7.7 | nC | 2 | |||
| Continuous Source-Drain Diode Current | IS | 9.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 37 | A | 2 | |||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 9.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 110 | 260 | ns | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.53 | 1.3 | μC | 2 | ||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRF520PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf520pbf-etched.step/irf520pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf520pbf.step/irf520pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
798bb2f284c04062, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF520PBF
**Vishay Intertech** · MOSFETs · TO-220AB
IRF520PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at VGS = ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated at VDS = 100 V with 9.2 A continuous drain current at TC = 25 °C; the datasheet's thermal resistance is specified junction-to-case (Drain). |
| 3 | S | passive | Source of the N-channel MOSFET; the integral body diode is rated at 9.2 A continuous source-drain current and 37 A pulsed diode forward current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 9.2 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 6.5 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 37 | A | | 1 |
| Linear Derating Factor | | | | 0.4 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 200 | mJ | | 1 |
| Repetitive Avalanche Current | IAR | | | 9.2 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 6 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 60 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 5.5 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s | 1 |
| Mounting Torque | | | | 10 | lbf·in | 6-32 or M3 screw | 1 |
| Mounting Torque | | | | 1.1 | N·m | 6-32 or M3 screw | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 62 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 2.5 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | μA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.27 | Ω | VGS = 10 V, ID = 5.5 A | 2 |
| Forward Transconductance | gfs | 2.7 | | | S | VDS = 50 V, ID = 5.5 A | 2 |
| Total Gate Charge | Qg | | | 16 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b | 2 |
| Gate-Source Charge | Qgs | | | 4.4 | nC | | 2 |
| Gate-Drain Charge | Qgd | | | 7.7 | nC | | 2 |
| Continuous Source-Drain Diode Current | IS | | | 9.2 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 37 | A | | 2 |
| Body Diode Voltage | VSD | | | 1.8 | V | TJ = 25 °C, IS = 9.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 110 | 260 | ns | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 0.53 | 1.3 | μC | | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS | | 0.5 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `IRF520PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf520pbf-etched.step` / `irf520pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf520pbf.step` / `irf520pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896295763521536) (9 pp, sha256 `798bb2f284c04062`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf520pbf-datasheet.pdf)