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IRF520PBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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IRF520PBF

Vishay Intertech · MOSFETs · TO-220AB

IRF520PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is rated at VGS = ±20 V in the absolute maximum ratings.
2 D passive Drain of the N-channel MOSFET, rated at VDS = 100 V with 9.2 A continuous drain current at TC = 25 °C; the datasheet's thermal resistance is specified junction-to-case (Drain).
3 S passive Source of the N-channel MOSFET; the integral body diode is rated at 9.2 A continuous source-drain current and 37 A pulsed diode forward current.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9.2 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 6.5 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 37 A 1
Linear Derating Factor 0.4 W/°C 1
Single Pulse Avalanche Energy EAS 200 mJ 1
Repetitive Avalanche Current IAR 9.2 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation PD 60 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Mounting Torque 1.1 N·m 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 2.5 °C/W 2
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 80 V, VGS = 0 V, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.27 Ω VGS = 10 V, ID = 5.5 A 2
Forward Transconductance gfs 2.7 S VDS = 50 V, ID = 5.5 A 2
Total Gate Charge Qg 16 nC VGS = 10 V, ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b 2
Gate-Source Charge Qgs 4.4 nC 2
Gate-Drain Charge Qgd 7.7 nC 2
Continuous Source-Drain Diode Current IS 9.2 A 2
Pulsed Diode Forward Current ISM 37 A 2
Body Diode Voltage VSD 1.8 V TJ = 25 °C, IS = 9.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 110 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.53 1.3 μC 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRF520PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf520pbf-etched.step / irf520pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf520pbf.step / irf520pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 798bb2f284c04062, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF