IRF4104PBF-VB

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  "slug": "irf4104pbf-vb",
  "title": "IRF4104PBF-VB",
  "brief": "VBsemi Elec MOSFETs, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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    "transistors-thyristors",
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  "component": {
    "mpn": "IRF4104PBF-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-220AB",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603043825015812096",
    "parts": {
      "symbol": "irf4104pbf-vb.kicad_sym",
      "footprint": "irf4104pbf-vb.kicad_mod",
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      "lbr": "irf4104pbf-vb.lbr"
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated MOSFET control terminal. Absolute maximum VGS = ±20 V; typical VGS(th) = 1.2 V to 2.5 V (VDS = VGS, ID = 250 µA). Gate resistance Rg ≈ 0.85 Ω typ."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. N-channel MOSFET drain, also electrically connected to the metal tab. Absolute maximum VDS = 40 V; continuous ID = 110 A at TC = 25 °C; pulsed IDM = 270 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. N-channel MOSFET source. Body diode from Source to Drain (VSD ≈ 0.8 V typ. at IS = 20 A, IS = 110 A continuous at TC = 25 °C)."
      },
      {
        "number": "TAB",
        "name": "D",
        "type": "passive",
        "description": "Heatsink tab, internally connected to the Drain. Used for thermal dissipation (RthJC = 0.33 °C/W typ.)."
      }
    ],
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        "described": 4,
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -9.75,
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  "metadata": {
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      "Manufacturer": "VBsemi Elec",
      "Package": "TO-220AB",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
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          "name": "Continuous Drain Current",
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          "name": "VDS Temperature Coefficient",
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          "kind": "temperature_coefficient",
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          "min": null,
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        {
          "name": "Gate-Source Threshold Voltage",
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          "name": "On-State Drain Current",
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          "unit": "A",
          "min": 120,
          "typ": null,
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          "conditions": "VDS ≥ 5 V, VGS = 10 V",
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          "name": "Drain-Source On-State Resistance",
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          "name": "Forward Transconductance",
          "symbol": "gfs",
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          "conditions": "VDS = 15 V, ID = 30 A",
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        {
          "name": "Output Capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
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        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "Crss",
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          "name": "Total Gate Charge",
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