component
IRF4104PBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
irf4104pbf-vb: specified limits as data (metadata.characteristics, 48 rows from the datasheet)
2 files changed
+638
README.md+55@@ -28,6 +28,61 @@ Same part, different packaging or reel option. - `IRF4104PBF-VB` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 40 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | 110 | A | TJ = 175 °C, TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 90 | A | TC = 70 °C | 1 |+| Continuous Drain Current | ID | | | 31 | A | TA = 25 °C (surface mounted on 1in x 1in FR4) | 1 |+| Continuous Drain Current | ID | | | 25 | A | TA = 70 °C | 1 |+| Pulsed Drain Current | IDM | | | 270 | A | | 1 |+| Avalanche Current Pulse | IAS | | | 85 | A | L = 0.1 mH | 1 |+| Continuous Source-Drain Diode Current | IS | | | 110 | A | TC = 25 °C | 1 |+| Continuous Source-Drain Diode Current | IS | | | 2.6 | A | TA = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 312 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 200 | W | TC = 70 °C | 1 |+| Maximum Power Dissipation | PD | | | 3.13 | W | TA = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | TA = 70 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (steady state) | RthJA | | 32 | 40 | °C/W | Steady state, surface mounted on 1in x 1in FR4 board | 1 |+| Maximum Junction-to-Case (steady state) | RthJC | | 0.33 | 0.4 | °C/W | Steady state | 1 |+| Drain-Source Breakdown Voltage | VDS | 40 | | | V | VGS = 0 V, ID = 250 µA | 2 |+| VDS Temperature Coefficient | ΔVDS/TJ | | 41 | | mV/°C | ID = 250 µA | 2 |+| Gate-Source Threshold Voltage | VGS(th) | 1.2 | | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |+| On-State Drain Current | ID(on) | 120 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 6 | mΩ | VGS = 10 V, ID = 30 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 7 | mΩ | VGS = 4.5 V, ID = 20 A | 2 |+| Forward Transconductance | gfs | | 180 | | S | VDS = 15 V, ID = 30 A | 2 |+| Output Capacitance | Coss | | 750 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 310 | | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 130 | | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 |+| Gate-Source Charge | Qgs | | 20 | | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 |+| Gate-Drain Charge | Qgd | | 32 | | nC | VDS = 20 V, VGS = 10 V, ID = 20 A | 2 |+| Gate Resistance | Rg | | 0.85 | 1.3 | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | 20 | 30 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 11 | 17 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 77 | 115 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 10 | 15 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-On Delay Time | td(on) | | 102 | 155 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 62 | 95 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 180 | 270 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 60 | 90 | ns | VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |+| Continuous Source-Drain Diode Current | IS | | | 110 | A | TC = 25 °C | 2 |+| Pulse Diode Forward Current | ISM | | | 200 | A | | 2 |+| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 20 A | 2 |+| Body Diode Reverse Recovery Time | trr | | 50 | 75 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 70 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |+| Reverse Recovery Fall Time | ta | | 30 | | ns | | 2 |+| Reverse Recovery Rise Time | tb | | 20 | | ns | | 2 |+ ## CAD (KiCad official) - Symbol: `IRF4104PBF-VB`
page.json+583@@ -122,6 +122,589 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "115af3893e73b834",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TJ = 175 °C, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 31,+ "conditions": "TA = 25 °C (surface mounted on 1in x 1in FR4)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 270,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current Pulse",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 312,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "TC = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.13,+ "conditions": "TA = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA = 70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady state)",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 32,+ "max": 40,+ "conditions": "Steady state, surface mounted on 1in x 1in FR4 board",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case (steady state)",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.33,+ "max": 0.4,+ "conditions": "Steady state",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VDS Temperature Coefficient",+ "symbol": "ΔVDS/TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 41,+ "max": null,+ "conditions": "ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": null,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 40 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 40 V, VGS = 0 V, TJ = 55 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 120,+ "typ": null,+ "max": null,+ "conditions": "VDS ≥ 5 V, VGS = 10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VGS = 10 V, ID = 30 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "VGS = 4.5 V, ID = 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 180,+ "max": null,+ "conditions": "VDS = 15 V, ID = 30 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 750,+ "max": null,+ "conditions": "VDS = 20 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 310,+ "max": null,+ "conditions": "VDS = 20 V, VGS = 0 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 130,+ "max": null,+ "conditions": "VDS = 20 V, VGS = 10 V, ID = 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "VDS = 20 V, VGS = 10 V, ID = 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 32,+ "max": null,+ "conditions": "VDS = 20 V, VGS = 10 V, ID = 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.85,+ "max": 1.3,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 30,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 17,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 77,+ "max": 115,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 15,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 102,+ "max": 155,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 62,+ "max": 95,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 180,+ "max": 270,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 60,+ "max": 90,+ "conditions": "VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source-Drain Diode Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulse Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "IS = 20 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": 75,+ "conditions": "IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 70,+ "max": 105,+ "conditions": "IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Fall Time",+ "symbol": "ta",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Rise Time",+ "symbol": "tb",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [