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IRF4104PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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IRF4104PBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRF4104PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated MOSFET control terminal. Absolute maximum VGS = ±20 V; typical VGS(th) = 1.2 V to 2.5 V (VDS = VGS, ID = 250 µA). Gate resistance Rg ≈ 0.85 Ω typ.
2 D passive Drain. N-channel MOSFET drain, also electrically connected to the metal tab. Absolute maximum VDS = 40 V; continuous ID = 110 A at TC = 25 °C; pulsed IDM = 270 A.
3 S passive Source. N-channel MOSFET source. Body diode from Source to Drain (VSD ≈ 0.8 V typ. at IS = 20 A, IS = 110 A continuous at TC = 25 °C).
TAB D passive Heatsink tab, internally connected to the Drain. Used for thermal dissipation (RthJC = 0.33 °C/W typ.).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • IRF4104PBF-VB

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 110 A TJ = 175 °C, TC = 25 °C 1
Continuous Drain Current ID 90 A TC = 70 °C 1
Continuous Drain Current ID 31 A TA = 25 °C (surface mounted on 1in x 1in FR4) 1
Continuous Drain Current ID 25 A TA = 70 °C 1
Pulsed Drain Current IDM 270 A 1
Avalanche Current Pulse IAS 85 A L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.6 A TA = 25 °C 1
Maximum Power Dissipation PD 312 W TC = 25 °C 1
Maximum Power Dissipation PD 200 W TC = 70 °C 1
Maximum Power Dissipation PD 3.13 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (steady state) RthJA 32 40 °C/W Steady state, surface mounted on 1in x 1in FR4 board 1
Maximum Junction-to-Case (steady state) RthJC 0.33 0.4 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
VDS Temperature Coefficient ΔVDS/TJ 41 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 6 mΩ VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 7 mΩ VGS = 4.5 V, ID = 20 A 2
Forward Transconductance gfs 180 S VDS = 15 V, ID = 30 A 2
Output Capacitance Coss 750 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 310 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 130 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate-Source Charge Qgs 20 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate-Drain Charge Qgd 32 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate Resistance Rg 0.85 1.3 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 20 30 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 77 115 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 102 155 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 62 95 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 180 270 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 60 90 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 2
Pulse Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 20 A 2
Body Diode Reverse Recovery Time trr 50 75 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 30 ns 2
Reverse Recovery Rise Time tb 20 ns 2

CAD (KiCad official)

  • Symbol: IRF4104PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf4104pbf-vb-etched.step / irf4104pbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf4104pbf-vb.step / irf4104pbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 115af3893e73b834, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF