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IRF3808PBF
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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF3808PBF
Infineon Technologies · MOSFETs · TO-220AB
IRF3808PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V, with a gate threshold of 2.0 V min to 4.0 V max at VDS = 10 V, ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDSS is 75 V, with 140 A continuous drain current at TC = 25°C (package limited to 75 A) and 550 A pulsed. |
| 3 | S | passive | Source; carries the same current as the drain, and the body diode continuous source current is 140 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 5.9 | 7 | mΩ | VGS = 10V, ID = 82A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = 10V, ID = 250µA | 2 | |
| Forward Transconductance | gfs | 100 | S | VDS = 25V, ID = 82A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS = 75V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 60V, VGS = 0V, TJ = 150°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 200 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -200 | nA | VGS = -20V | 2 | ||
| Total Gate Charge | Qg | 150 | 220 | nC | ID = 82A | 2 | |
| Gate-to-Source Charge | Qgs | 31 | 47 | nC | VDS = 60V | 2 | |
| Gate-to-Drain (Miller) Charge | Qgd | 50 | 76 | nC | VGS = 10V | 2 | |
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C, IS = 82A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 93 | 140 | ns | TJ = 25°C, IF = 82A | 2 | |
| Reverse Recovery Charge | Qrr | 340 | 510 | nC | di/dt = 100A/µs | 2 | |
| Continuous Source Current (Body Diode) | IS | 140 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 550 | A | 2 | |||
| Continuous Drain Current, VGS @ 10V | ID | 140 | A | TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 97 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 550 | A | 1 | |||
| Power Dissipation | PD | 330 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 2.2 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 430 | mJ | 1 | |||
| Avalanche Current | IAR | 82 | A | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | 1 | |||
| Operating Junction Temperature | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbf•in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N•m | 6-32 or M3 screw | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.45 | °C/W | Junction-to-Case | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | Junction-to-Ambient | 1 | ||
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS | 0.5 | °C/W | Case-to-Sink, Flat, Greased Surface | 1 |
CAD (KiCad official)
- Symbol:
IRF3808PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irf3808pbf-etched.step/irf3808pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf3808pbf.step/irf3808pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
7e05b9d8637d7239, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF3808PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRF3808PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V, with a gate threshold of 2.0 V min to 4.0 V max at VDS = 10 V, ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDSS is 75 V, with 140 A continuous drain current at TC = 25°C (package limited to 75 A) and 550 A pulsed. |
| 3 | S | passive | Source; carries the same current as the drain, and the body diode continuous source current is 140 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 75 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 5.9 | 7 | mΩ | VGS = 10V, ID = 82A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = 10V, ID = 250µA | 2 |
| Forward Transconductance | gfs | 100 | | | S | VDS = 25V, ID = 82A | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS = 75V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 60V, VGS = 0V, TJ = 150°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 200 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -200 | nA | VGS = -20V | 2 |
| Total Gate Charge | Qg | | 150 | 220 | nC | ID = 82A | 2 |
| Gate-to-Source Charge | Qgs | | 31 | 47 | nC | VDS = 60V | 2 |
| Gate-to-Drain (Miller) Charge | Qgd | | 50 | 76 | nC | VGS = 10V | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 82A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 93 | 140 | ns | TJ = 25°C, IF = 82A | 2 |
| Reverse Recovery Charge | Qrr | | 340 | 510 | nC | di/dt = 100A/µs | 2 |
| Continuous Source Current (Body Diode) | IS | | | 140 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 550 | A | | 2 |
| Continuous Drain Current, VGS @ 10V | ID | | | 140 | A | TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 97 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 550 | A | | 1 |
| Power Dissipation | PD | | | 330 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 2.2 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 430 | mJ | | 1 |
| Avalanche Current | IAR | | | 82 | A | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5.5 | V/ns | | 1 |
| Operating Junction Temperature | TJ | -55 | | 175 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Mounting Torque | | | | 10 | lbf•in | 6-32 or M3 screw | 1 |
| Mounting Torque | | | | 1.1 | N•m | 6-32 or M3 screw | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.45 | °C/W | Junction-to-Case | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | Junction-to-Ambient | 1 |
| Case-to-Sink Thermal Resistance, Flat, Greased Surface | RθCS | | 0.5 | | °C/W | Case-to-Sink, Flat, Greased Surface | 1 |
## CAD (KiCad official)
- Symbol: `IRF3808PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf3808pbf-etched.step` / `irf3808pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf3808pbf.step` / `irf3808pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588896296992182272) (9 pp, sha256 `7e05b9d8637d7239`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf3808pbf-datasheet.pdf)