component

IRF3808PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirf3808pbffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers irf3808pbf: viewers · Ray 16d ago
irf3808pbf-etched.glb Publish 0.1.0 · Ray 16d ago
irf3808pbf-etched.step irf3808pbf: factory component page (tier=lcsc) · Ray 16d ago
irf3808pbf-hero.glb irf3808pbf: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
irf3808pbf-hero.overlay.json Publish 0.1.0 · Ray 16d ago
irf3808pbf.glb Publish 0.1.0 · Ray 16d ago
irf3808pbf.kicad_mod Publish 0.1.0 · Ray 16d ago
irf3808pbf.kicad_sym Publish 0.1.0 · Ray 16d ago
irf3808pbf.lbr Publish 0.1.0 · Ray 16d ago
irf3808pbf.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

IRF3808PBF

Infineon Technologies · MOSFETs · TO-220AB

IRF3808PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is limited to ±20 V, with a gate threshold of 2.0 V min to 4.0 V max at VDS = 10 V, ID = 250 µA.
2 D passive Drain (also connected to the mounting tab); VDSS is 75 V, with 140 A continuous drain current at TC = 25°C (package limited to 75 A) and 550 A pulsed.
3 S passive Source; carries the same current as the drain, and the body diode continuous source current is 140 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 75 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 5.9 7 mΩ VGS = 10V, ID = 82A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = 10V, ID = 250µA 2
Forward Transconductance gfs 100 S VDS = 25V, ID = 82A 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 75V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 60V, VGS = 0V, TJ = 150°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Total Gate Charge Qg 150 220 nC ID = 82A 2
Gate-to-Source Charge Qgs 31 47 nC VDS = 60V 2
Gate-to-Drain (Miller) Charge Qgd 50 76 nC VGS = 10V 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 82A, VGS = 0V 2
Reverse Recovery Time trr 93 140 ns TJ = 25°C, IF = 82A 2
Reverse Recovery Charge Qrr 340 510 nC di/dt = 100A/µs 2
Continuous Source Current (Body Diode) IS 140 A 2
Pulsed Source Current (Body Diode) ISM 550 A 2
Continuous Drain Current, VGS @ 10V ID 140 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID 97 A TC = 100°C 1
Pulsed Drain Current IDM 550 A 1
Power Dissipation PD 330 W TC = 25°C 1
Linear Derating Factor 2.2 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 430 mJ 1
Avalanche Current IAR 82 A 1
Peak Diode Recovery dv/dt dv/dt 5.5 V/ns 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbf•in 6-32 or M3 screw 1
Mounting Torque 1.1 N•m 6-32 or M3 screw 1
Junction-to-Case Thermal Resistance RθJC 0.45 °C/W Junction-to-Case 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W Junction-to-Ambient 1
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Case-to-Sink, Flat, Greased Surface 1

CAD (KiCad official)

  • Symbol: IRF3808PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irf3808pbf-etched.step / irf3808pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf3808pbf.step / irf3808pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 7e05b9d8637d7239, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF