# IRF150P220AKMA1

**Infineon Technologies** · MOSFETs · TO-247-3

IRF150P220AKMA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with gate-source voltage limited to -20 V to 20 V (VGS). |
| 2 | Drain | passive | Drain terminal, rated for 150 V drain-source voltage and 203 A continuous drain current at TC=25°C (VGS=10 V). |
| 3 | Source | passive | Source terminal, the reference for the gate-source voltage and the return path for the drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (VGS=10V, TC=25°C) | ID |  |  | 203 | A | VGS=10V, TC=25°C | 3 |
| Continuous drain current (silicon limited) | ID |  |  | 316 | A | VGS=10V, TC=25°C (silicon limited) | 3 |
| Continuous drain current (silicon limited) | ID |  |  | 224 | A | VGS=10V, TC=100°C (silicon limited) | 3 |
| Pulsed drain current | ID,pulse |  |  | 812 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 834 | mJ | ID=100A, RGS=50Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 556 | W | TC=25°C | 3 |
| Power dissipation | Ptot |  |  | 3.8 | W | TA=25°C, RthJA=40°C/W | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 0.27 | °C/W |  | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 40 | °C/W |  | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 150 |  |  | V | VGS=0V, ID=1mA | 4 |
| Gate threshold voltage | VGS(th) | 3 |  | 4.6 | V | VDS=VGS, ID=265µA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS |  |  | 1 | µA | VDS=120V, VGS=0V, Tj=25°C | 4 |
| Zero gate voltage drain current (Tj=125°C) | IDSS |  |  | 100 | µA | VDS=120V, VGS=0V, Tj=125°C | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 2.3 | 2.7 | mΩ | VGS=10V, ID=100A | 4 |
| Gate charge total | Qg |  | 160 | 200 | nC | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Diode continuous forward current | IS |  |  | 203 | A | TC=25°C | 5 |
| Diode pulse current | IS,pulse |  |  | 812 | A | TC=25°C | 5 |
| Diode forward voltage | VSD |  |  | 1.1 | V | VGS=0V, IF=100A, Tj=25°C | 5 |
| Breakdown voltage temperature coefficient | dV(BR)DSS/dTj |  | 50 |  | mV/°C | ID=2mA, referenced to 25°C | 4 |
| Gate resistance | RG |  | 0.5 |  | Ω |  | 4 |
| Transconductance | gfs |  | 200 |  | S | /VDS/≥2/ID/RDS(on)max, ID=100A | 4 |
| Input capacitance | Ciss |  | 12000 |  | pF | VGS=0V, VDS=75V, f=1MHz | 4 |
| Output capacitance | Coss |  | 3000 |  | pF | VGS=0V, VDS=75V, f=1MHz | 4 |
| Reverse transfer capacitance | Crss |  | 65 |  | pF | VGS=0V, VDS=75V, f=1MHz | 4 |
| Turn-on delay time | td(on) |  | 33 |  | ns | VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω | 4 |
| Rise time | tr |  | 100 |  | ns | VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω | 4 |
| Turn-off delay time | td(off) |  | 50 |  | ns | VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω | 4 |
| Fall time | tf |  | 85 |  | ns | VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω | 4 |
| Gate to source charge | Qgs |  | 65 |  | nC | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Gate charge at threshold | Qg(th) |  | 46 |  | nC | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Gate to drain charge | Qgd |  | 32 |  | nC | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Switching charge | Qsw |  | 51 |  | nC | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Gate plateau voltage | Vplateau |  | 5.4 |  | V | VDD=75V, ID=100A, VGS=0 to 10V | 4 |
| Gate charge total, sync. FET | Qg(sync) |  | 128 |  | nC | VDS=0.1V, VGS=0 to 10V | 4 |
| Output charge | Qoss |  | 451 |  | nC | VDD=75V, VGS=0V | 4 |
| Reverse recovery time | trr |  | 110 |  | ns | VR=128V, IF=100A, diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr |  | 250 |  | nC | VR=128V, IF=100A, diF/dt=100A/µs | 5 |
| Thermal resistance, case-to-sink (flat greased surface) | RthCS |  | 0.24 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `IRF150P220AKMA1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `irf150p220akma1-etched.step` / `irf150p220akma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf150p220akma1.step` / `irf150p220akma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590307522054815744) (11 pp, sha256 `544d0c58b5129f78`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf150p220akma1-datasheet.pdf)