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IRF150P220AKMA1

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Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF150P220AKMA1

Infineon Technologies · MOSFETs · TO-247-3

IRF150P220AKMA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with gate-source voltage limited to -20 V to 20 V (VGS).
2 Drain passive Drain terminal, rated for 150 V drain-source voltage and 203 A continuous drain current at TC=25°C (VGS=10 V).
3 Source passive Source terminal, the reference for the gate-source voltage and the return path for the drain current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (VGS=10V, TC=25°C) ID 203 A VGS=10V, TC=25°C 3
Continuous drain current (silicon limited) ID 316 A VGS=10V, TC=25°C (silicon limited) 3
Continuous drain current (silicon limited) ID 224 A VGS=10V, TC=100°C (silicon limited) 3
Pulsed drain current ID,pulse 812 A TC=25°C 3
Avalanche energy, single pulse EAS 834 mJ ID=100A, RGS=50Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 556 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3
Thermal resistance, junction - case RthJC 0.27 °C/W 3
Thermal resistance, junction - ambient RthJA 40 °C/W 3
Drain-source breakdown voltage V(BR)DSS 150 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 3 4.6 V VDS=VGS, ID=265µA 4
Zero gate voltage drain current (Tj=25°C) IDSS 1 µA VDS=120V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current (Tj=125°C) IDSS 100 µA VDS=120V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 2.3 2.7 mΩ VGS=10V, ID=100A 4
Gate charge total Qg 160 200 nC VDD=75V, ID=100A, VGS=0 to 10V 4
Diode continuous forward current IS 203 A TC=25°C 5
Diode pulse current IS,pulse 812 A TC=25°C 5
Diode forward voltage VSD 1.1 V VGS=0V, IF=100A, Tj=25°C 5
Breakdown voltage temperature coefficient dV(BR)DSS/dTj 50 mV/°C ID=2mA, referenced to 25°C 4
Gate resistance RG 0.5 Ω 4
Transconductance gfs 200 S /VDS/≥2/ID/RDS(on)max, ID=100A 4
Input capacitance Ciss 12000 pF VGS=0V, VDS=75V, f=1MHz 4
Output capacitance Coss 3000 pF VGS=0V, VDS=75V, f=1MHz 4
Reverse transfer capacitance Crss 65 pF VGS=0V, VDS=75V, f=1MHz 4
Turn-on delay time td(on) 33 ns VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω 4
Rise time tr 100 ns VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω 4
Turn-off delay time td(off) 50 ns VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω 4
Fall time tf 85 ns VDD=75V, VGS=10V, ID=100A, RG,ext=2.7Ω 4
Gate to source charge Qgs 65 nC VDD=75V, ID=100A, VGS=0 to 10V 4
Gate charge at threshold Qg(th) 46 nC VDD=75V, ID=100A, VGS=0 to 10V 4
Gate to drain charge Qgd 32 nC VDD=75V, ID=100A, VGS=0 to 10V 4
Switching charge Qsw 51 nC VDD=75V, ID=100A, VGS=0 to 10V 4
Gate plateau voltage Vplateau 5.4 V VDD=75V, ID=100A, VGS=0 to 10V 4
Gate charge total, sync. FET Qg(sync) 128 nC VDS=0.1V, VGS=0 to 10V 4
Output charge Qoss 451 nC VDD=75V, VGS=0V 4
Reverse recovery time trr 110 ns VR=128V, IF=100A, diF/dt=100A/µs 5
Reverse recovery charge Qrr 250 nC VR=128V, IF=100A, diF/dt=100A/µs 5
Thermal resistance, case-to-sink (flat greased surface) RthCS 0.24 °C/W 3

CAD (KiCad official)

  • Symbol: IRF150P220AKMA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: irf150p220akma1-etched.step / irf150p220akma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf150p220akma1.step / irf150p220akma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 544d0c58b5129f78, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF