# IR3537MTRPBF

**Infineon Technologies** · Gate Drive ICs · DFN-10-EP(3x3)

IR3537MTRPBF from Infineon Technologies, in a DFN-10-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | power_in | Floating bootstrap supply pin for the upper gate drive, with a bootstrap capacitor connected between this pin and the SWITCH pin. |
| 2 | HVCC | power_in | Supply for the high-side gate drive, connected to VCC (+12V) or a separate supply between 4.5V and 13.2V, and to the anode of the internal bootstrap diode, with a low ESR ceramic capacitor to GND. |
| 3 | PWM | input | Control input for the driver accepting a 1.8V or 3.3V PWM signal from the controller, which can enter three distinct states during operation. |
| 4 | VCC | power_in | Connected to a +12V bias supply, with a high quality low ESR ceramic capacitor from this pin to GND. |
| 5 | LVCC | power_in | Low-side gate drive supply, connected to VCC (+12V) or a separate supply between 4.5V and 13.2V, which must always be less than or equal to VCC+0.7Vdc. |
| 6 | LO_GATE | output | Lower gate drive output connected to the gate of the low-side power N-channel MOSFET. |
| 7 | GND | power_in | Bias and reference ground to which all signals are referenced, and the power ground return of the driver. |
| 8 | MODE | input | Selects the PWM mode: floating configures IR Active Tri-Level operation with 1.8V PWM, and connecting to ground configures generic active tri-state operation with 3.3V PWM. |
| 9 | SWITCH | passive | Connected to the source of the upper MOSFET and the drain of the lower MOSFET, providing the return path for the upper gate drive. |
| 10 | HI_GATE | output | Upper gate drive output connected to the gate of the high-side power N-channel MOSFET. |
| 11 | GND | power_in | Exposed thermal pad serving as bias and reference ground for all signals and as the power ground return of the driver. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | DFN-10-EP(3x3) |
| Category | Power Management ICs |
| Pins | 11 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| BOOT pin voltage, reference to GND |  |  |  | 35 | V | Reference to GND | 5 |
| BOOT pin voltage, reference to SWITCH |  |  |  | 15 | V | Reference to SWITCH | 5 |
| PWM pin voltage | PWM |  |  | 7 | V |  | 5 |
| VCC, HVCC supply voltage | VCC, HVCC |  |  | 15 | V |  | 5 |
| LVCC supply voltage | LVCC |  |  | 15 | V | VCC+0.7Vdc to a maximum of +15.0V | 5 |
| LO_GATE voltage, DC | LO_GATE | -0.3 |  | 0.3 | V | DC; max is 0.3V above VCC | 5 |
| LO_GATE voltage, <200 ns | LO_GATE | -2 |  | 0.3 | V | <200 ns; max is 0.3V above VCC | 5 |
| SWITCH voltage, DC | SWITCH | -0.3 |  | 15 | V | DC | 5 |
| SWITCH voltage, <20 ns | SWITCH |  |  | 25 | V | <20 ns | 5 |
| SWITCH voltage, <5 ns | SWITCH | -10 |  |  | V | <5 ns | 5 |
| SWITCH voltage, <20 ns (negative) | SWITCH | -4 |  |  | V | <20 ns | 5 |
| SWITCH voltage, <200 ns (negative) | SWITCH | -2 |  |  | V | <200 ns | 5 |
| HI_GATE voltage, DC | HI_GATE | -0.3 |  | 0.3 | V | DC; min relative to SWITCH, max 0.3V above VBOOT | 5 |
| HI_GATE voltage, <200 ns | HI_GATE | -2 |  | 0.3 | V | <200 ns; min relative to SWITCH, max 0.3V above VBOOT | 5 |
| MODE pin voltage | MODE | -0.3 |  | 15 | V |  | 5 |
| ESD, Charged Device Model |  | -1000 |  | 1000 | V | JESD22-C101-C, passes +/-1000V | 5 |
| Recommended operating ambient temperature |  | 0 |  | 85 | °C |  | 6 |
| Recommended operating junction temperature |  |  |  | 125 | °C |  | 6 |
| Recommended LVCC & HVCC range | LVCC, HVCC | 4.5 |  | 13.2 | V | LVCC must be ≤ VCC+0.7Vdc | 6 |
| Recommended supply voltage tolerance | VCC | -10 |  | 10 | % | +12V ± 10% | 6 |
| Recommended supply voltage | VCC |  | 12 |  | V | +12V ± 10% | 6 |
| Maximum storage temperature range |  | -65 |  | 150 | °C |  | 5 |
| Maximum operating junction temperature |  |  |  | 150 | °C |  | 5 |
| Maximum lead temperature (soldering) |  |  |  | 300 | °C | Soldering 10 s | 5 |
| Thermal resistance, junction-to-case (θJC) | θJC |  | 3 |  | °C/W |  | 5 |
| Thermal resistance, junction-to-ambient (θJA) | θJA |  | 45 |  | °C/W | Note 1: measured with component mounted on high effective thermal conductivity test board in free air | 5 |

## CAD (KiCad official)

- Symbol: `IR3537MTRPBF`
- Footprint: `Package_DFN_QFN:DFN-10-1EP_3x3mm_P0.5mm_EP1.55x2.48mm`
- 3D model: DFN-10-EP(3x3) (KiCad packages3D, STEP)
- 3D model files: `ir3537mtrpbf-etched.step` / `ir3537mtrpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ir3537mtrpbf.step` / `ir3537mtrpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ir3537mtrpbf-datasheet.pdf) (15 pp, sha256 `a7a0c5ee65dc2722`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ir3537mtrpbf-datasheet.pdf)