# IPW65R041CFD7XKSA1

**Infineon Technologies** · MOSFETs · TO-247-3

IPW65R041CFD7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with a static VGS rating of -20 V to 20 V (±30 V dynamic AC, f>1 Hz) and a gate threshold of 3.5 V to 4.5 V. |
| 2 | Drain | passive | Drain terminal (also connected to the tab) with V(BR)DSS of 650 V minimum and continuous drain current of 50 A at TC=25°C. |
| 3 | Source | passive | Source terminal, connected to the internal body diode, with continuous diode forward current of 50 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 |  |  | V | VGS=0V,ID=1mA | 5 |
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS,ID=1.24mA | 5 |
| Zero gate voltage drain current | IDSS |  | 19 | 38 | µA | VDS=650V,VGS=0V,Tj=25°C | 5 |
| Zero gate voltage drain current | IDSS |  | 1 |  | µA | VDS=650V,VGS=0V,Tj=125°C | 5 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V,VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.034 | 0.041 | Ω | VGS=10V,ID=24.8A,Tj=25°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.076 |  | Ω | VGS=10V,ID=24.8A,Tj=150°C | 5 |
| Diode forward voltage | VSD |  | 1 |  | V | VGS=0V,IF=24.8A,Tj=25°C | 6 |
| Reverse recovery time | trr |  | 177 | 265.5 | ns | VR=400V,IF=24.8A,diF/dt=100A/µs | 6 |
| Reverse recovery charge | Qrr |  | 1.2 | 2.4 | µC | VR=400V,IF=24.8A,diF/dt=100A/µs | 6 |
| Continuous drain current | ID |  |  | 50 | A | TC=25°C | 3 |
| Continuous drain current | ID |  |  | 32 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 211 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 248 | mJ | ID=6.4A; VDD=50V | 3 |
| Avalanche energy, repetitive | EAR |  |  | 1.24 | mJ | ID=6.4A; VDD=50V | 3 |
| Avalanche current, single pulse | IAS |  |  | 6.4 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 120 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot |  |  | 227 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Mounting torque |  |  |  | 60 | Ncm | M3 and M3.5 screws | 3 |
| Continuous diode forward current | IS |  |  | 50 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 211 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 70 | V/ns | VDS=0...400V,ISD<=24.8A,Tj=25°C | 3 |
| Maximum diode commutation speed | diF/dt |  |  | 1300 | A/µs | VDS=0...400V,ISD<=24.8A,Tj=25°C | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 0.55 | °C/W |  | 4 |
| Thermal resistance, junction - ambient | RthJA |  |  | 62 | °C/W | leaded | 4 |
| Soldering temperature, wavesoldering only allowed at leads | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 |
| Gate resistance | RG |  | 3.8 |  | Ω | f=1MHz,open drain | 5 |
| Input capacitance | Ciss |  | 4975 |  | pF | VGS=0V,VDS=400V,f=250kHz | 5 |
| Output capacitance | Coss |  | 75 |  | pF | VGS=0V,VDS=400V,f=250kHz | 5 |
| Effective output capacitance, energy related | Co(er) |  | 175 |  | pF | VGS=0V,VDS=0...400V | 5 |
| Effective output capacitance, time related | Co(tr) |  | 1825 |  | pF | ID=constant,VGS=0V,VDS=0...400V | 5 |
| Turn-on delay time | td(on) |  | 34 |  | ns | VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω | 5 |
| Rise time | tr |  | 12 |  | ns | VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω | 5 |
| Turn-off delay time | td(off) |  | 115 |  | ns | VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω | 5 |
| Fall time | tf |  | 3 |  | ns | VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω | 5 |
| Gate to source charge | Qgs |  | 28 |  | nC | VDD=400V,ID=24.8A,VGS=0to10V | 5 |
| Gate to drain charge | Qgd |  | 31 |  | nC | VDD=400V,ID=24.8A,VGS=0to10V | 5 |
| Gate charge total | Qg |  | 102 |  | nC | VDD=400V,ID=24.8A,VGS=0to10V | 5 |
| Gate plateau voltage | Vplateau |  | 5.7 |  | V | VDD=400V,ID=24.8A,VGS=0to10V | 5 |
| Peak reverse recovery current | Irrm |  | 11.8 |  | A | VR=400V,IF=24.8A,diF/dt=100A/µs | 6 |

## CAD (KiCad official)

- Symbol: `IPW65R041CFD7XKSA1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ipw65r041cfd7xksa1-etched.step` / `ipw65r041cfd7xksa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipw65r041cfd7xksa1.step` / `ipw65r041cfd7xksa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipw65r041cfd7xksa1-datasheet.pdf) (14 pp, sha256 `414a154a79ad7560`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipw65r041cfd7xksa1-datasheet.pdf)