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IPW65R041CFD7XKSA1

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Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPW65R041CFD7XKSA1

Infineon Technologies · MOSFETs · TO-247-3

IPW65R041CFD7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with a static VGS rating of -20 V to 20 V (±30 V dynamic AC, f>1 Hz) and a gate threshold of 3.5 V to 4.5 V.
2 Drain passive Drain terminal (also connected to the tab) with V(BR)DSS of 650 V minimum and continuous drain current of 50 A at TC=25°C.
3 Source passive Source terminal, connected to the internal body diode, with continuous diode forward current of 50 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=1.24mA 5
Zero gate voltage drain current IDSS 19 38 µA VDS=650V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=125°C 5
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.034 0.041 Ω VGS=10V,ID=24.8A,Tj=25°C 5
Drain-source on-state resistance RDS(on) 0.076 Ω VGS=10V,ID=24.8A,Tj=150°C 5
Diode forward voltage VSD 1 V VGS=0V,IF=24.8A,Tj=25°C 6
Reverse recovery time trr 177 265.5 ns VR=400V,IF=24.8A,diF/dt=100A/µs 6
Reverse recovery charge Qrr 1.2 2.4 µC VR=400V,IF=24.8A,diF/dt=100A/µs 6
Continuous drain current ID 50 A TC=25°C 3
Continuous drain current ID 32 A TC=100°C 3
Pulsed drain current ID,pulse 211 A TC=25°C 3
Avalanche energy, single pulse EAS 248 mJ ID=6.4A; VDD=50V 3
Avalanche energy, repetitive EAR 1.24 mJ ID=6.4A; VDD=50V 3
Avalanche current, single pulse IAS 6.4 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 227 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 50 A TC=25°C 3
Diode pulse current IS,pulse 211 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V,ISD<=24.8A,Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V,ISD<=24.8A,Tj=25°C 3
Thermal resistance, junction - case RthJC 0.55 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering only allowed at leads Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Gate resistance RG 3.8 Ω f=1MHz,open drain 5
Input capacitance Ciss 4975 pF VGS=0V,VDS=400V,f=250kHz 5
Output capacitance Coss 75 pF VGS=0V,VDS=400V,f=250kHz 5
Effective output capacitance, energy related Co(er) 175 pF VGS=0V,VDS=0...400V 5
Effective output capacitance, time related Co(tr) 1825 pF ID=constant,VGS=0V,VDS=0...400V 5
Turn-on delay time td(on) 34 ns VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω 5
Rise time tr 12 ns VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω 5
Turn-off delay time td(off) 115 ns VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω 5
Fall time tf 3 ns VDD=400V,VGS=13V,ID=24.8A,RG=3.3Ω 5
Gate to source charge Qgs 28 nC VDD=400V,ID=24.8A,VGS=0to10V 5
Gate to drain charge Qgd 31 nC VDD=400V,ID=24.8A,VGS=0to10V 5
Gate charge total Qg 102 nC VDD=400V,ID=24.8A,VGS=0to10V 5
Gate plateau voltage Vplateau 5.7 V VDD=400V,ID=24.8A,VGS=0to10V 5
Peak reverse recovery current Irrm 11.8 A VR=400V,IF=24.8A,diF/dt=100A/µs 6

CAD (KiCad official)

  • Symbol: IPW65R041CFD7XKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ipw65r041cfd7xksa1-etched.step / ipw65r041cfd7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw65r041cfd7xksa1.step / ipw65r041cfd7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 414a154a79ad7560, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF