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IPW65R029CFD7XKSA1

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Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPW65R029CFD7XKSA1

Infineon Technologies · MOSFETs · TO-247-3

IPW65R029CFD7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; static gate-source voltage is limited to ±20 V and dynamic (AC, f>1 Hz) to ±30 V, and the typical internal gate resistance RG is 3.8 Ω.
2 Drain passive Drain terminal of the MOSFET; continuous drain current is 69 A at TC=25°C and 44 A at TC=100°C, with pulsed drain current up to 304 A.
3 Source passive Source terminal and reference for the gate-source voltage; the internal body diode is connected between drain and source.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 69 A TC=25°C 3
Continuous drain current ID 44 A TC=100°C 3
Pulsed drain current ID,pulse 304 A TC=25°C 3
Avalanche energy, single pulse EAS 358 mJ ID=7.3A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 1.79 mJ ID=7.3A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 7.3 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 305 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 69 A TC=25°C 3
Diode pulse current IS,pulse 304 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V,ISD<=35.8A,Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V,ISD<=35.8A,Tj=25°C; see table 8 3
Thermal resistance, junction - case RthJC 0.41 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s; only allowed at leads 4
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=1.79mA 5
Zero gate voltage drain current (Tj=25°C) IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current (Tj=125°C) IDSS 27 54 µA VDS=650V,VGS=0V,Tj=125°C 5
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance (Tj=25°C) RDS(on) 0.024 0.029 Ω VGS=10V,ID=35.8A,Tj=25°C 5
Reverse recovery time trr 208 312 ns VR=400V,IF=35.8A,diF/dt=100A/µs; see table 8 6
Reverse recovery charge Qrr 1.6 3.2 µC VR=400V,IF=35.8A,diF/dt=100A/µs; see table 8 6

CAD (KiCad official)

  • Symbol: IPW65R029CFD7XKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ipw65r029cfd7xksa1-etched.step / ipw65r029cfd7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw65r029cfd7xksa1.step / ipw65r029cfd7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 fa72aea91fc780db, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF