component
IPW65R029CFD7XKSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPW65R029CFD7XKSA1
Infineon Technologies · MOSFETs · TO-247-3
IPW65R029CFD7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; static gate-source voltage is limited to ±20 V and dynamic (AC, f>1 Hz) to ±30 V, and the typical internal gate resistance RG is 3.8 Ω. |
| 2 | Drain | passive | Drain terminal of the MOSFET; continuous drain current is 69 A at TC=25°C and 44 A at TC=100°C, with pulsed drain current up to 304 A. |
| 3 | Source | passive | Source terminal and reference for the gate-source voltage; the internal body diode is connected between drain and source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 69 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 44 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 304 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 358 | mJ | ID=7.3A; VDD=50V; see table 10 | 3 | ||
| Avalanche energy, repetitive | EAR | 1.79 | mJ | ID=7.3A; VDD=50V; see table 10 | 3 | ||
| Avalanche current, single pulse | IAS | 7.3 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 120 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 305 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 3 | |||
| Continuous diode forward current | IS | 69 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 304 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 70 | V/ns | VDS=0...400V,ISD<=35.8A,Tj=25°C | 3 | ||
| Maximum diode commutation speed | diF/dt | 1300 | A/µs | VDS=0...400V,ISD<=35.8A,Tj=25°C; see table 8 | 3 | ||
| Thermal resistance, junction - case | RthJC | 0.41 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | leaded | 4 | ||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s; only allowed at leads | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V,ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS,ID=1.79mA | 5 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 1 | µA | VDS=650V,VGS=0V,Tj=25°C | 5 | ||
| Zero gate voltage drain current (Tj=125°C) | IDSS | 27 | 54 | µA | VDS=650V,VGS=0V,Tj=125°C | 5 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 0.024 | 0.029 | Ω | VGS=10V,ID=35.8A,Tj=25°C | 5 | |
| Reverse recovery time | trr | 208 | 312 | ns | VR=400V,IF=35.8A,diF/dt=100A/µs; see table 8 | 6 | |
| Reverse recovery charge | Qrr | 1.6 | 3.2 | µC | VR=400V,IF=35.8A,diF/dt=100A/µs; see table 8 | 6 |
CAD (KiCad official)
- Symbol:
IPW65R029CFD7XKSA1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ipw65r029cfd7xksa1-etched.step/ipw65r029cfd7xksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipw65r029cfd7xksa1.step/ipw65r029cfd7xksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
fa72aea91fc780db, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).