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IPW60R099P7XKSA1

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Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripw60r099p7xksa1factory-2.0.0extractor-text

Verified IPW60R099P7XKSA1

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPW60R099P7XKSA1 · TO-247-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C3278923, digikey 448-IPW60R099P7XKSA1-ND, mouser 726-IPW60R099P7XKSA1
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-vvd2wme1/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipw60r099p7xksa1.kicad_sym✓ ipw60r099p7xksa1.kicad_mod✓ ipw60r099p7xksa1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2h ago
viewers ipw60r099p7xksa1: viewers · Ray 2h ago
ipw60r099p7xksa1-etched.glb Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1-etched.step ipw60r099p7xksa1: factory component page (tier=mfr) · Ray 2h ago
ipw60r099p7xksa1-hero.glb ipw60r099p7xksa1: hero GLB from the etched model (keeps the MPN mark) · Ray 2h ago
ipw60r099p7xksa1-hero.overlay.json Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1.glb Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1.kicad_mod Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1.kicad_sym Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1.lbr Publish 0.1.0 · Ray 2h ago
ipw60r099p7xksa1.step Publish 0.1.0 · Ray 2h ago
package.json Publish 0.1.0 · Ray 2h ago
page.json Set visibility: public · Ray 2h ago
README.md Publish 0.1.0 · Ray 2h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 2h ago

IPW60R099P7XKSA1

Infineon Technologies · MOSFETs · TO-247-3

IPW60R099P7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the static gate-source voltage is limited to ±20 V and the dynamic (AC, f>1 Hz) gate-source voltage to ±30 V.
2 Drain passive Drain terminal, rated for VDS at Tj,max of 650 V, with continuous drain current of 31 A at TC=25°C; the mounting tab is also drain.
3 Source passive Source terminal, the reference for the gate-source voltage ratings of ±20 V static and ±30 V dynamic.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS, ID=0.53mA 5
Zero gate voltage drain current IDSS 1 10 µA VDS=600V, VGS=0V, Tj=25°C 5
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.077 0.099 Ω VGS=10V, ID=10.5A, Tj=25°C 5
Drain-source on-state resistance RDS(on) 0.18 Ω VGS=10V, ID=10.5A, Tj=150°C 5
Continuous drain current ID 31 A TC=25°C 3
Continuous drain current ID 20 A TC=100°C 3
Pulsed drain current ID,pulse 100 A TC=25°C 3
Avalanche energy, single pulse EAS 105 mJ ID=5.1A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.53 mJ ID=5.1A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 5.1 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 117 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 31 A TC=25°C 3
Diode pulse current IS,pulse 100 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V, ISD<=31A, Tj=25°C 3
Maximum diode commutation speed diF/dt 900 A/µs VDS=0...400V, ISD<=31A, Tj=25°C 3
Thermal resistance, junction - case RthJC 1.07 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C only allowed at leads, 1.6mm (0.063 in.) from case for 10s 4

CAD (KiCad official)

  • Symbol: IPW60R099P7XKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ipw60r099p7xksa1-etched.step / ipw60r099p7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw60r099p7xksa1.step / ipw60r099p7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 ef2c3f0b29d9fa10, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF