IPW60R099P7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal; the static gate-source voltage is limited to ±20 V and the dynamic (AC, f>1 Hz) gate-source voltage to ±30 V.
2	Drain	passive	Drain terminal, rated for VDS at Tj,max of 650 V, with continuous drain current of 31 A at TC=25°C; the mounting tab is also drain.
3	Source	passive	Source terminal, the reference for the gate-source voltage ratings of ±20 V static and ±30 V dynamic.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-247-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source breakdown voltage	V(BR)DSS	600			V	VGS=0V, ID=1mA	5
Gate threshold voltage	V(GS)th	3	3.5	4	V	VDS=VGS, ID=0.53mA	5
Zero gate voltage drain current	IDSS		1	10	µA	VDS=600V, VGS=0V, Tj=25°C	5
Gate-source leakage current	IGSS			100	nA	VGS=20V, VDS=0V	5
Drain-source on-state resistance	RDS(on)		0.077	0.099	Ω	VGS=10V, ID=10.5A, Tj=25°C	5
Drain-source on-state resistance	RDS(on)		0.18		Ω	VGS=10V, ID=10.5A, Tj=150°C	5
Continuous drain current	ID			31	A	TC=25°C	3
Continuous drain current	ID			20	A	TC=100°C	3
Pulsed drain current	ID,pulse			100	A	TC=25°C	3
Avalanche energy, single pulse	EAS			105	mJ	ID=5.1A; VDD=50V; see table 10	3
Avalanche energy, repetitive	EAR			0.53	mJ	ID=5.1A; VDD=50V; see table 10	3
Avalanche current, single pulse	IAS			5.1	A		3
MOSFET dv/dt ruggedness	dv/dt			80	V/ns	VDS=0...400V	3
Gate source voltage (static)	VGS	-20		20	V	static	3
Gate source voltage (dynamic)	VGS	-30		30	V	AC (f>1 Hz)	3
Power dissipation	Ptot			117	W	TC=25°C	3
Storage temperature	Tstg	-55		150	°C		3
Operating junction temperature	Tj	-55		150	°C		3
Mounting torque				60	Ncm	M3 and M3.5 screws	3
Continuous diode forward current	IS			31	A	TC=25°C	3
Diode pulse current	IS,pulse			100	A	TC=25°C	3
Reverse diode dv/dt	dv/dt			50	V/ns	VDS=0...400V, ISD<=31A, Tj=25°C	3
Maximum diode commutation speed	diF/dt			900	A/µs	VDS=0...400V, ISD<=31A, Tj=25°C	3
Thermal resistance, junction - case	RthJC			1.07	°C/W		4
Thermal resistance, junction - ambient	RthJA			62	°C/W	leaded	4
Soldering temperature, wavesoldering	Tsold			260	°C	only allowed at leads, 1.6mm (0.063 in.) from case for 10s	4

CAD (KiCad official)

Symbol: IPW60R099P7XKSA1
Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
3D model: TO-247-3 (KiCad packages3D, STEP)
3D model files: ipw60r099p7xksa1-etched.step / ipw60r099p7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw60r099p7xksa1.step / ipw60r099p7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (14 pp, sha256 ef2c3f0b29d9fa10, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IPW60R099P7XKSA1

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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