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IPU60R2K1CE

Infineon Technologies · MOSFETs · TO-251

IPU60R2K1CE from Infineon Technologies, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the datasheet limits gate-source voltage to ±20 V static and ±30 V dynamic (AC f>1 Hz).
2 Drain passive Drain terminal, electrically connected to the tab; continuous drain current is 3.7 A at TC=25°C, pulsed drain current is limited to 6 A, and drain-source breakdown voltage is 600 V minimum.
3 Source passive Source terminal; the datasheet gives no separate source-pin rating, and the gate-source voltage limits are referenced to this pin.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 3.7 A TC=25°C 3
Continuous drain current ID 2.4 A TC=100°C 3
Pulsed drain current ID,pulse 6 A TC=25°C 3
Avalanche energy, single pulse EAS 11 mJ ID=0.4A; VDD=50V; see table 11 3
Avalanche energy, repetitive EAR 0.06 mJ ID=0.4A; VDD=50V; see table 11 3
Avalanche current, repetitive IAR 0.4 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation TO-251, TO252 Ptot 38 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Continuous diode forward current IS 2.7 A TC=25°C 3
Diode pulse current IS,pulse 6 A TC=25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=IS, Tj=25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V, ISD<=IS, Tj=25°C 3
Thermal resistance, junction - case RthJC 3.26 °C/W 3
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 3
Soldering temperature, wavesoldering Tsold 260 °C only allowed at leads, 1.6mm (0.063 in.) from case for 10s 3
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=0.25mA 4
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS, ID=0.06mA 4
Zero gate voltage drain current IDSS 10 µA VDS=600, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 1.8 2.1 Ω VGS=10V, ID=0.76A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: IPU60R2K1CE
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: ipu60r2k1ce-etched.step / ipu60r2k1ce-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipu60r2k1ce.step / ipu60r2k1ce.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 dd11cca11833ef1e, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF