component
IPU60R2K1CE
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| ipu60r2k1ce-etched.glb | 2h ago |
| ipu60r2k1ce-etched.step | 2h ago |
| ipu60r2k1ce-hero.glb | 2h ago |
| ipu60r2k1ce-hero.overlay.json | 2h ago |
| ipu60r2k1ce.glb | 2h ago |
| ipu60r2k1ce.kicad_mod | 2h ago |
| ipu60r2k1ce.kicad_sym | 2h ago |
| ipu60r2k1ce.lbr | 2h ago |
| ipu60r2k1ce.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
| verification.json | 2h ago |
IPU60R2K1CE
Infineon Technologies · MOSFETs · TO-251
IPU60R2K1CE from Infineon Technologies, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet limits gate-source voltage to ±20 V static and ±30 V dynamic (AC f>1 Hz). |
| 2 | Drain | passive | Drain terminal, electrically connected to the tab; continuous drain current is 3.7 A at TC=25°C, pulsed drain current is limited to 6 A, and drain-source breakdown voltage is 600 V minimum. |
| 3 | Source | passive | Source terminal; the datasheet gives no separate source-pin rating, and the gate-source voltage limits are referenced to this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 3.7 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 2.4 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 6 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 11 | mJ | ID=0.4A; VDD=50V; see table 11 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.06 | mJ | ID=0.4A; VDD=50V; see table 11 | 3 | ||
| Avalanche current, repetitive | IAR | 0.4 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...480V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation TO-251, TO252 | Ptot | 38 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 2.7 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 6 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 500 | A/µs | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 3.26 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | leaded | 3 | ||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | only allowed at leads, 1.6mm (0.063 in.) from case for 10s | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V, ID=0.25mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.06mA | 4 |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=600, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 1.8 | 2.1 | Ω | VGS=10V, ID=0.76A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
IPU60R2K1CE - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
ipu60r2k1ce-etched.step/ipu60r2k1ce-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipu60r2k1ce.step/ipu60r2k1ce.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
dd11cca11833ef1e, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).