# IPP60R199CP-VB

**VBsemi Elec** · MOSFETs · TO-220AB

IPP60R199CP-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the N-channel MOSFET with a maximum gate-source voltage of ±30 V and a threshold of 2 V to 4 V. |
| 2 | D | passive | Drain; rated for 650 V drain-source voltage and 20 A continuous current at TC = 25 °C (60 A pulsed). |
| 3 | S | passive | Source; the current return terminal of the N-channel MOSFET, also the anode of the body diode (continuous diode current 21 A). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 650 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS = ± 20 V | 2 |
| Gate-Source Leakage | IGSS |  |  | 1 | μA | VGS = ± 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 520 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 500 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Rise Time | tr |  | 34 | 68 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Turn-Off Delay Time | td(off) |  | 68 | 102 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Fall Time | tf |  | 42 | 84 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 21 | A |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 53 | A |  | 2 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 |
| Drain-Source Voltage | VDS |  |  | 650 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 20 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 13 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Linear Derating Factor |  |  |  | 1.7 | W/°C | TC = 25 °C | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 367 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25, IAS = 5.1 A | 1 |
| Maximum Power Dissipation | PD |  |  | 208 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-Source Voltage Slope | dV/dt |  |  | 37 | V/ns | TJ = 125 °C | 1 |
| Reverse Diode dV/dt | dV/dt |  |  | 31 | V/ns | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 0.5 | °C/W |  | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ |  | 0.67 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.19 |  | Ω | VGS = 10 V, ID = 11 A | 2 |
| Forward Transconductance | gfs |  | 7 |  | S | VDS = 30 V, ID = 11 A | 2 |
| Input Capacitance | Ciss |  | 2322 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 105 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 4 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Effective Output Capacitance, Energy Related | Co(er) |  | 84 |  | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 |
| Effective Output Capacitance, Time Related | Co(tr) |  | 293 |  | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 |
| Gate-Source Charge | Qgs |  | 14 |  | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 |
| Gate-Drain Charge | Qgd |  | 33 |  | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 |
| Gate Input Resistance | Rg |  | 0.78 |  | Ω | f = 1 MHz, open drain | 2 |
| Reverse Recovery Time | trr |  | 160 |  | ns | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
| Reverse Recovery Charge | Qrr |  | 1.2 |  | μC | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
| Reverse Recovery Current | IRRM |  | 14 |  | A | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 |

## CAD (KiCad official)

- Symbol: `IPP60R199CP-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `ipp60r199cp-vb-etched.step` / `ipp60r199cp-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipp60r199cp-vb.step` / `ipp60r199cp-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ipp60r199cp-vb-datasheet.pdf) (8 pp, sha256 `bf6896ddd4f1a5c5`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipp60r199cp-vb-datasheet.pdf)