component
IPP60R199CP-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP60R199CP-VB
VBsemi Elec · MOSFETs · TO-220AB
IPP60R199CP-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the N-channel MOSFET with a maximum gate-source voltage of ±30 V and a threshold of 2 V to 4 V. |
| 2 | D | passive | Drain; rated for 650 V drain-source voltage and 20 A continuous current at TC = 25 °C (60 A pulsed). |
| 3 | S | passive | Source; the current return terminal of the N-channel MOSFET, also the anode of the body diode (continuous diode current 21 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ± 20 V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | μA | VGS = ± 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 520 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Rise Time | tr | 34 | 68 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Turn-Off Delay Time | td(off) | 68 | 102 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Fall Time | tf | 42 | 84 | ns | VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 | 2 | |
| Continuous Source-Drain Diode Current | IS | 21 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 53 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | TJ = 25 °C, IS = 11 A, VGS = 0 V | 2 | |
| Drain-Source Voltage | VDS | 650 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 20 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 13 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear Derating Factor | 1.7 | W/°C | TC = 25 °C | 1 | |||
| Single Pulse Avalanche Energy | EAS | 367 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25, IAS = 5.1 A | 1 | ||
| Maximum Power Dissipation | PD | 208 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 37 | V/ns | TJ = 125 °C | 1 | ||
| Reverse Diode dV/dt | dV/dt | 31 | V/ns | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.5 | °C/W | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.67 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.19 | Ω | VGS = 10 V, ID = 11 A | 2 | ||
| Forward Transconductance | gfs | 7 | S | VDS = 30 V, ID = 11 A | 2 | ||
| Input Capacitance | Ciss | 2322 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 105 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Effective Output Capacitance, Energy Related | Co(er) | 84 | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 | ||
| Effective Output Capacitance, Time Related | Co(tr) | 293 | pF | VDS = 0 V to 520 V, VGS = 0 V | 2 | ||
| Gate-Source Charge | Qgs | 14 | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 | ||
| Gate-Drain Charge | Qgd | 33 | nC | VGS = 10 V, ID = 11 A, VDS = 520 V | 2 | ||
| Gate Input Resistance | Rg | 0.78 | Ω | f = 1 MHz, open drain | 2 | ||
| Reverse Recovery Time | trr | 160 | ns | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 | ||
| Reverse Recovery Charge | Qrr | 1.2 | μC | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 | ||
| Reverse Recovery Current | IRRM | 14 | A | TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V | 2 |
CAD (KiCad official)
- Symbol:
IPP60R199CP-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
ipp60r199cp-vb-etched.step/ipp60r199cp-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp60r199cp-vb.step/ipp60r199cp-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
bf6896ddd4f1a5c5, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).