# IPP60R070CFD7

**Infineon Technologies** · MOSFETs · TO-220-3

IPP60R070CFD7 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the MOSFET; static VGS limit is ±20 V (±30 V dynamic AC, f>1 Hz) with typical threshold of 4 V (3.5 to 4.5 V). |
| 2 | Drain | passive | Drain pin, also connected to the tab; VDS breakdown is min 600 V and continuous drain current is 31 A at TC=25°C. |
| 3 | Source | passive | Source pin of the MOSFET; continuous body diode forward current is 31 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS=0V, ID=1mA | 5 |
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS, ID=0.76mA | 5 |
| Zero gate voltage drain current | IDSS |  | 1 | 63 | µA | VDS=600V, VGS=0V, Tj=125°C | 5 |
| Zero gate voltage drain current | IDSS |  | 15 |  | µA | VDS=600V, VGS=0V, Tj=25°C | 5 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.057 | 0.07 | Ω | VGS=10V, ID=15.1A, Tj=25°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.129 |  | Ω | VGS=10V, ID=15.1A, Tj=150°C | 5 |
| Reverse recovery time | trr |  | 124 | 186 | ns | VR=400V, IF=11A, diF/dt=100A/µs | 6 |
| Reverse recovery charge | Qrr |  | 0.57 | 1.14 | µC | VR=400V, IF=11A, diF/dt=100A/µs | 6 |
| Continuous drain current | ID |  |  | 31 | A | TC=25°C | 3 |
| Continuous drain current | ID |  |  | 20 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 129 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 151 | mJ | ID=6.3A; VDD=50V | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.76 | mJ | ID=6.3A; VDD=50V | 3 |
| Avalanche current, single pulse | IAS |  |  | 6.3 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 120 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot |  |  | 156 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| Mounting torque |  |  |  | 60 | Ncm | M3 and M3.5 screws | 3 |
| Continuous diode forward current | IS |  |  | 31 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 129 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 70 | V/ns | VDS=0...400V, ISD<=31A, Tj=25°C | 3 |
| Maximum diode commutation speed | diF/dt |  |  | 1300 | A/µs | VDS=0...400V, ISD<=31A, Tj=25°C | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 0.8 | °C/W |  | 4 |
| Thermal resistance, junction - ambient | RthJA |  |  | 62 | °C/W | leaded | 4 |
| Soldering temperature | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 |
| Gate resistance | RG |  | 5.9 |  | Ω | f=1MHz, open drain | 5 |
| Input capacitance | Ciss |  | 2721 |  | pF | VGS=0V, VDS=400V, f=250kHz | 5 |
| Output capacitance | Coss |  | 53 |  | pF | VGS=0V, VDS=400V, f=250kHz | 5 |
| Effective output capacitance, energy related | Co(er) |  | 96 |  | pF | VGS=0V, VDS=0...400V | 5 |
| Effective output capacitance, time related | Co(tr) |  | 990 |  | pF | ID=constant, VGS=0V, VDS=0...400V | 5 |
| Turn-on delay time | td(on) |  | 26 |  | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 |
| Rise time | tr |  | 23 |  | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 |
| Turn-off delay time | td(off) |  | 99 |  | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 |
| Fall time | tf |  | 6 |  | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 |
| Gate to source charge | Qgs |  | 15 |  | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 |
| Gate to drain charge | Qgd |  | 23 |  | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 |
| Gate charge total | Qg |  | 67 |  | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 |
| Gate plateau voltage | Vplateau |  | 5.5 |  | V | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 |
| Diode forward voltage | VSD |  | 1 |  | V | VGS=0V, IF=15.1A, Tj=25°C | 6 |
| Peak reverse recovery current | Irrm |  | 7.8 |  | A | VR=400V, IF=11A, diF/dt=100A/µs | 6 |

## CAD (KiCad official)

- Symbol: `IPP60R070CFD7`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `ipp60r070cfd7-etched.step` / `ipp60r070cfd7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipp60r070cfd7.step` / `ipp60r070cfd7.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipp60r070cfd7-datasheet.pdf) (14 pp, sha256 `8429886a34418a41`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipp60r070cfd7-datasheet.pdf)