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IPP60R070CFD7
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP60R070CFD7
Infineon Technologies · MOSFETs · TO-220-3
IPP60R070CFD7 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the MOSFET; static VGS limit is ±20 V (±30 V dynamic AC, f>1 Hz) with typical threshold of 4 V (3.5 to 4.5 V). |
| 2 | Drain | passive | Drain pin, also connected to the tab; VDS breakdown is min 600 V and continuous drain current is 31 A at TC=25°C. |
| 3 | Source | passive | Source pin of the MOSFET; continuous body diode forward current is 31 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V, ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS, ID=0.76mA | 5 |
| Zero gate voltage drain current | IDSS | 1 | 63 | µA | VDS=600V, VGS=0V, Tj=125°C | 5 | |
| Zero gate voltage drain current | IDSS | 15 | µA | VDS=600V, VGS=0V, Tj=25°C | 5 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.057 | 0.07 | Ω | VGS=10V, ID=15.1A, Tj=25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 0.129 | Ω | VGS=10V, ID=15.1A, Tj=150°C | 5 | ||
| Reverse recovery time | trr | 124 | 186 | ns | VR=400V, IF=11A, diF/dt=100A/µs | 6 | |
| Reverse recovery charge | Qrr | 0.57 | 1.14 | µC | VR=400V, IF=11A, diF/dt=100A/µs | 6 | |
| Continuous drain current | ID | 31 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 20 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 129 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 151 | mJ | ID=6.3A; VDD=50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.76 | mJ | ID=6.3A; VDD=50V | 3 | ||
| Avalanche current, single pulse | IAS | 6.3 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 120 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 156 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 3 | |||
| Continuous diode forward current | IS | 31 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 129 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 70 | V/ns | VDS=0...400V, ISD<=31A, Tj=25°C | 3 | ||
| Maximum diode commutation speed | diF/dt | 1300 | A/µs | VDS=0...400V, ISD<=31A, Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 0.8 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | leaded | 4 | ||
| Soldering temperature | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 | ||
| Gate resistance | RG | 5.9 | Ω | f=1MHz, open drain | 5 | ||
| Input capacitance | Ciss | 2721 | pF | VGS=0V, VDS=400V, f=250kHz | 5 | ||
| Output capacitance | Coss | 53 | pF | VGS=0V, VDS=400V, f=250kHz | 5 | ||
| Effective output capacitance, energy related | Co(er) | 96 | pF | VGS=0V, VDS=0...400V | 5 | ||
| Effective output capacitance, time related | Co(tr) | 990 | pF | ID=constant, VGS=0V, VDS=0...400V | 5 | ||
| Turn-on delay time | td(on) | 26 | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 | ||
| Rise time | tr | 23 | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 | ||
| Turn-off delay time | td(off) | 99 | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 | ||
| Fall time | tf | 6 | ns | VDD=400V, VGS=10V, ID=11.0A, RG=5.3Ω | 5 | ||
| Gate to source charge | Qgs | 15 | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 | ||
| Gate to drain charge | Qgd | 23 | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 | ||
| Gate charge total | Qg | 67 | nC | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 | ||
| Gate plateau voltage | Vplateau | 5.5 | V | VDD=400V, ID=11.0A, VGS=0 to 10V | 5 | ||
| Diode forward voltage | VSD | 1 | V | VGS=0V, IF=15.1A, Tj=25°C | 6 | ||
| Peak reverse recovery current | Irrm | 7.8 | A | VR=400V, IF=11A, diF/dt=100A/µs | 6 |
CAD (KiCad official)
- Symbol:
IPP60R070CFD7 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp60r070cfd7-etched.step/ipp60r070cfd7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp60r070cfd7.step/ipp60r070cfd7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
8429886a34418a41, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).