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IPP26CN10NG-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripp26cn10ng-vbfactory-2.0.0extractor-text

Verified IPP26CN10NG-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPP26CN10NG-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-130fvr84/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipp26cn10ng-vb.kicad_sym✓ ipp26cn10ng-vb.kicad_mod✓ ipp26cn10ng-vb.step
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ipp26cn10ng-vb / README.md
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Ray Publish 0.1.0 77640a6 4d ago

IPP26CN10NG-VB

VBsemi Elec · MOSFETs · TO-220AB

IPP26CN10NG-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±20 V.
2 D passive Drain terminal; drain-source voltage is rated at 100 V and the datasheet specifies a continuous drain current of 70 A (package limited).
3 S passive Source terminal; the source-drain diode is rated at a continuous current of 70 A and a pulsed current of 115 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 70 A TC = 25 °C (TJ = 175 °C) 1
Continuous Drain Current ID 35 A TC = 125 °C 1
Pulsed Drain Current IDM 145 A 1
Single Pulse Avalanche Energy EAS 60 mJ 1
Maximum Power Dissipation PD 355 W TC = 25 °C 1
Maximum Power Dissipation PD 3.35 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB Mount 1
Junction-to-Case Thermal Resistance RthJC 0.4 °C/W Junction-to-Case (Drain) 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.023 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.037 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Forward Transconductance gfs 25 S VDS = 15 V, ID = 30 A 2
Gate Resistance Rg 0.5 1.3 3.1 Ω 2
Turn-On Delay Time td(on) 24 35 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 220 330 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 200 300 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Continuous Current IS 70 A TC = 25 °C 2
Pulsed Current ISM 115 A 2
Forward Voltage VSD 1 1.5 V IF = 58 A, VGS = 0 V 2
Reverse Recovery Time trr 130 200 ns IF = 30 A, di/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 8 12 A 2
Reverse Recovery Charge Qrr 0.52 1.2 µC 2

CAD (KiCad official)

  • Symbol: IPP26CN10NG-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: ipp26cn10ng-vb-etched.step / ipp26cn10ng-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp26cn10ng-vb.step / ipp26cn10ng-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 9254435b29716a0c, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF