IPP26CN10NG-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; the gate-source voltage is rated at ±20 V.
2	D	passive	Drain terminal; drain-source voltage is rated at 100 V and the datasheet specifies a continuous drain current of 70 A (package limited).
3	S	passive	Source terminal; the source-drain diode is rated at a continuous current of 70 A and a pulsed current of 115 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-220AB
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			70	A	TC = 25 °C (TJ = 175 °C)	1
Continuous Drain Current	ID			35	A	TC = 125 °C	1
Pulsed Drain Current	IDM			145	A		1
Single Pulse Avalanche Energy	EAS			60	mJ		1
Maximum Power Dissipation	PD			355	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3.35	W	TA = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Junction-to-Ambient Thermal Resistance	RthJA			40	°C/W	PCB Mount	1
Junction-to-Case Thermal Resistance	RthJC			0.4	°C/W	Junction-to-Case (Drain)	1
Drain-Source Breakdown Voltage	V(BR)DSS	100			V	VDS = 0 V, ID = 250 µA	2
Gate-Body Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 100 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS = 100 V, VGS = 0 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 100 V, VGS = 0 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	120			A	VDS ≥ 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	rDS(on)			0.023	Ω	VGS = 10 V, ID = 30 A, TJ = 125 °C	2
Drain-Source On-State Resistance	rDS(on)			0.037	Ω	VGS = 10 V, ID = 30 A, TJ = 175 °C	2
Forward Transconductance	gfs	25			S	VDS = 15 V, ID = 30 A	2
Gate Resistance	Rg	0.5	1.3	3.1	Ω		2
Turn-On Delay Time	td(on)		24	35	ns	VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω	2
Rise Time	tr		220	330	ns	VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω	2
Turn-Off Delay Time	td(off)		45	70	ns	VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω	2
Fall Time	tf		200	300	ns	VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω	2
Continuous Current	IS			70	A	TC = 25 °C	2
Pulsed Current	ISM			115	A		2
Forward Voltage	VSD		1	1.5	V	IF = 58 A, VGS = 0 V	2
Reverse Recovery Time	trr		130	200	ns	IF = 30 A, di/dt = 100 A/µs	2
Peak Reverse Recovery Current	IRM(REC)		8	12	A		2
Reverse Recovery Charge	Qrr		0.52	1.2	µC		2

CAD (KiCad official)

Symbol: IPP26CN10NG-VB
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: ipp26cn10ng-vb-etched.step / ipp26cn10ng-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp26cn10ng-vb.step / ipp26cn10ng-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 9254435b29716a0c, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IPP26CN10NG-VB

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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