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IPP200N25N3 G

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP200N25N3 G

Infineon Technologies · MOSFETs · TO-220-3

IPP200N25N3 G from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (pin 1); gate-source voltage limit is ±20 V, with typical gate threshold VGS(th) of 3 V (2 to 4 V) at ID=270 µA.
2 D passive Drain (pin 2); VDS is 250 V, continuous drain current is 64 A at TC=25 °C and pulsed drain current is 256 A.
3 S passive Source (pin 3); RDS(on) is max 20 mΩ at VGS=10 V and ID=64 A, and the body diode continuous forward current is 64 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 64 A TC=25 °C 1
Continuous drain current ID 46 A TC=100 °C 1
Pulsed drain current ID,pulse 256 A TC=25 °C 1
Avalanche energy, single pulse EAS 320 mJ ID=47 A, RGS=25 W 1
Reverse diode dv/dt dv/dt 10 kV/µs 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 300 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 0.5 K/W 2
Thermal resistance, junction - ambient RthJA 62 K/W minimal footprint 2
Thermal resistance, junction - ambient RthJA 40 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS 250 V VGS=0 V, ID=1 mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=270 µA 2
Zero gate voltage drain current IDSS 0.1 1 µA VDS=200 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current IDSS 10 100 µA VDS=200 V, VGS=0 V, Tj=125 °C 2
Gate-source leakage current IGSS 1 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 17.5 20 mW VGS=10 V, ID=64 A 2
Transconductance gfs 61 122 S /VDS/>2/ID/RDS(on)max, ID=64 A 2
Input capacitance Ciss 5340 7100 pF VGS=0 V, VDS=100 V, f=1 MHz 3
Output capacitance Coss 297 395 pF VGS=0 V, VDS=100 V, f=1 MHz 3
Gate charge total Qg 64 86 nC VDD=100 V, ID=25 A, VGS=0 to 10 V 3
Output charge Qoss 135 179 nC VDD=100 V, VGS=0 V 3
Diode continuous forward current IS 64 A 3
Diode pulse current IS,pulse 256 A 3
Diode forward voltage VSD 1 1.2 V VGS=0 V, IF=64 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: IPP200N25N3 G
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp200n25n3-g-etched.step / ipp200n25n3-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp200n25n3-g.step / ipp200n25n3-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 c77e409d831124d2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF